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K. Mathews
K. Mathews
SEMATECH
MOSFET
Electronic engineering
NMOS logic
Subthreshold conduction
Negative-bias temperature instability
5
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23
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Understanding Strain Effects on Double-Gate FinFET Drive-Current Enhancement, Hot-Carrier Reliability and Ring-Oscillator Delay Performance via Uniaxial Wafer Bending Experiments
2008
VLSI-TSA | International Symposium on VLSI Technology, Systems, and Applications
S. Suthram
H.R. Harris
Muhammad Mustafa Hussain
Casey Smith
Chadwin D. Young
Ji-Woon Yang
K. Mathews
Karen Freeman
Prashant Majhi
H.-H. Tseng
R. Jammy
Scott E. Thompson
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Citations (5)
Implication of polarity dependence degradation on NMOSFET with polysilicon/Hf-silicate gate stack
2005
IRPS | International Reliability Physics Symposium
Rino Choi
B. H. Lee
Chadwin D. Young
J. H. Sim
K. Mathews
G. Bersuker
P. Zeitzoff
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Comparison of NMOS and PMOS stress for determining the source of NBTI in TiN/HfSiON devices [MOSFETs]
2005
IRPS | International Reliability Physics Symposium
H. R. Harris
Rino Choi
B. H. Lee
Chadwin D. Young
J. H. Sim
K. Mathews
P. Zeitzoff
Prashant Majhi
G. Bersuker
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Citations (13)
Effects of drain to gate stress on NMOSFET with polysilicon/Hf-silicate gate stack
2004
IIRW | International Integrated Reliability Workshop
Rino Choi
B. H. Lee
Chadwin D. Young
J. H. Sim
K. Mathews
G. Bersuker
P. Zeitzoff
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Recovery of NBTI degradation in HfSiON/metal gate transistors
2004
IIRW | International Integrated Reliability Workshop
H. R. Harris
Rino Choi
Byoung Hun Lee
Chadwin D. Young
J. H. Sim
K. Mathews
P. Zeitzoff
Prashant Majhi
G. Bersuker
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Citations (5)
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