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Weijiang Ni
Weijiang Ni
Chinese Academy of Sciences
MOSFET
Gate oxide
Electric field
Optoelectronics
Analytical chemistry
4
Papers
8
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0
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Comparative Study of SiC Planar MOSFETs With Different p-Body Designs
2020
IEEE Transactions on Electron Devices
Weijiang Ni
Xiaoliang Wang
Miaoling Xu
Mingshan Li
Chun Feng
Hongling Xiao
Lijuan Jiang
Wei Li
Quan Wang
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1700V 34mΩ 4H-SiC MOSFET With Retrograde Doping in Junction Field-Effect Transistor Region
2019
EDSSC | International Conference on Electron Devices and Solid-State Circuits
Weijiang Ni
Xiaoliang Wang
Hongling Xiao
Miaoling Xu
Mingshan Li
Holger Schlichting
Tobias Erlbacher
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Design and Fabrication of 3300V 100mΩ 4H-SiC MOSFET with Stepped p-body Structure
2019
SSLChina | China International Forum on Solid State Lighting
Weijiang Ni
Tobias Erlbacher
Xiaoliang Wang
Miaoling Xu
Mingshan Li
Chun Feng
Hongling Xiao
Wei Li
Quan Wang
Holger Schlichting
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Study of Asymmetric Cell Structure Tilt Implanted 4H-SiC Trench MOSFET
2019
IEEE Electron Device Letters
Weijiang Ni
Xiaoliang Wang
Miaolin Xu
Quan Wang
Chun Feng
Honglin Xiao
Lijuan Jiang
Wei Li
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Citations (4)
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