1700V 34mΩ 4H-SiC MOSFET With Retrograde Doping in Junction Field-Effect Transistor Region

in this paper, we designed and fabricated 1700V 4H-SiC MOSFETs. 2D TCAD tool was used to optimize the MOSFET cell and field limiting ring junction termination. Retrograde profile doping is formed by N+ ion implantation in the junction field-effect transistor region, which reduces the on-resistance effectively. Finally, the on-resistance of 34 milliohm and the threshold voltage of 1.56V are obtained from the fabricated MOSFETs. A subthreshold swing of 164 mV/decade was measured, and the interface state density was calculated to be 3.6E11 cm−2eV−1.