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P. Gergaud

Commissariat à l'énergie atomique et aux énergies alternatives

11

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25

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Understanding and improving the low optical emission of InGaAs quantum wells grown on oxidized patterned (001) silicon substrate

2018 Applied Physics Letters
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Redistribution of phosphorus during NiPtSi formation on in-situ doped Si

2018 Microelectronic Engineering
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InGaAs-OI Substrate Fabrication on a 300 mm Wafer

2016 Journal of Low Power Electronics and Applications
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300 mm InGaAsOI substrate fabrication using the Smart Cut TM technology

2015 S3S | IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference
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Solid state reaction of Ni thin film on n-InP susbtrate for III-V laser contact technology

2015 IITC | International Interconnect Technology Conference
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