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S.K. Su
S.K. Su
TSMC
Optoelectronics
Dielectric
Nanowire
Very-large-scale integration
Atomic layer deposition
2
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24
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Sub-0.5 nm Interfacial Dielectric Enables Superior Electrostatics: 65 mV/dec Top-Gated Carbon Nanotube FETs at 15 nm Gate Length
2020
IEDM | International Electron Devices Meeting
Gregory Pitner
Z. Zhang
Q. Lin
S.K. Su
C. Gilardi
C. Kuo
H. Kashyap
T. Weiss
Zhiping Yu
T. A. Chao
Lain-Jong Li
Subhasish Mitra
Hon-Sum Philip Wong
Jin Cai
Andrew C. Kummel
P. Bandaru
Matthias Passlack
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Ge CMOS gate stack and contact development for Vertically Stacked Lateral Nanowire FETs
2018
IEDM | International Electron Devices Meeting
M.J.H. van Dal
Georgios Vellianitis
Gerben Doornbos
B. Duriez
M. Holland
T. Vasen
Aryan Afzalian
E. Chen
S.K. Su
Tung-Tsun Chen
Tzer-Min Shen
Z.Q. Wu
Carlos H. Diaz
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Citations (20)
1