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T. Wojtowicz

Centre national de la recherche scientifique

23

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186

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The microstructure of GaN nucleation layers grown by MOCVD on (1120) sapphire versus pressure

2018
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Structure and role of ultrathin AlN layers for improving optical activation of rare earth implanted GaN

2006 Physica Status Solidi B-basic Solid State Physics
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Transmission electron microscopy investigation of the structural damage formed in GaN by medium range energy rare earth ion implantation

2006 Journal of Applied Physics
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High temperature annealing of rare earth implanted GaN films: Structural and optical properties

2006 Optical Materials
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The structure of crystallographic damage in GaN formed during rare earth ion implantation with and without an ultrathin AlN capping layer

2006 Superlattices and Microstructures
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TEM investigation of Tm implanted GaN, the influence of high temperature annealing

2006 Optical Materials
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High temperature annealing of rare-earth implanted GaN

2005
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Transmission electron microscopy of GaN layers in‐situ doped with Er during plasma assisted MBE

2005 Physica Status Solidi (c)
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Characterisation of defects in rare earth implanted GaN by deep level transient spectroscopy

2004 Superlattices and Microstructures
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Structural and optical characterization of highly Er and Eu doped GaN layers grown by MBE

2004 Physica Status Solidi (c)
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