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The microstructure of GaN nucleation layers grown by MOCVD on (1120) sapphire versus pressure
The microstructure of GaN nucleation layers grown by MOCVD on (1120) sapphire versus pressure
2018
T. Wojtowicz
P. Ruterana
M. E. Twigg
R.L. Henry
D D Koleske
A. E. Wickenden
Keywords:
Microstructure
Nucleation
Optoelectronics
Metalorganic vapour phase epitaxy
Sapphire
Materials science
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