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V.B. Glazman
V.B. Glazman
Annealing (metallurgy)
Nuclear magnetic resonance
Silicon
Chemistry
Analytical chemistry
7
Papers
23
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Photoluminescence of Por-Si with High-ordered Mosaic Structure Received at Long Anodic Etching p-Si (100) in the Electrolyte with an Internal Current Source
2013
Optics and Photonics Journal
K. B. Tynyshtykbaev
V.B. Glazman
Mukhtar Yeleuov
A. T. Isova
B. A. Rakymetov
D. Muratov
Serekbol Zh. Tokmoldin
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Citations (2)
Influence of structure changes of oxide films on their physical properties
2005
Materials Science and Engineering B-advanced Functional Solid-state Materials
B.N. Mukashev
S.Zh. Tokmoldin
N. B. Beisenkhanov
S. M. Kikkarin
I. V. Valitova
V.B. Glazman
A.B. Aimagambetov
E. A. Dmitrieva
B.M. Veremenithev
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Citations (10)
Nature of hydrogen bonding in Si-A-center
1989
Physica Status Solidi B-basic Solid State Physics
G. L. Gutsev
G. S. Myakenkaya
V. V. Frolov
V.B. Glazman
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Citations (7)
Defect annealing investigation in ion implanted Si by CESR technique
1976
Radiation Effects and Defects in Solids
A.V. Dvurechensky
N. N. Cerasimenko
V.B. Glazman
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Citations (1)
Investigation of the defect profiles in ion-irradiated and annealed silicon by the conduction electron ESR method
1975
N. N. Gerasimenko
V.B. Glazman
A. V. Dvurechenskii
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