Defect annealing investigation in ion implanted Si by CESR technique

Abstract The variations of both the linewidth δH[G] of the conduction electron spin resonance (CESR) and the conduction electron density N[cm−2] in the ion implanted silicon layers during annealing at 300° to 1000°C are presented. Defects responsible for CESR line broadening near the surface or near the average projected range of phosphorus ions are shown to have a similar nature. The results obtained provide direct evidence that the defects are clusters involving a few interstitial phosphorus atoms.