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M. Satoh
M. Satoh
Hosei University
Doping
Physics
Radiochemistry
Analytical chemistry
Condensed matter physics
4
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60
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Quenching phenomenon of photoconductance in indium doped dislocation free GaAs
1988
Solid State Communications
M. Satoh
H. Kawahara
K. Kuriyama
Chul-Sung Kim
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Citations (6)
Influence of fast neutrons on electrical properties in neutron transmutation doped GaAs: New annealing stage
1987
Applied Physics Letters
M. Satoh
K. Kuriyama
M. Yahagi
K. Iwamura
Chul-Sung Kim
T. Kawakubo
Kenji Yoneda
Itsuro Kimura
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Citations (21)
Ion channeling effect of In dopant in semi‐insulating GaAs
1986
Applied Physics Letters
K. Kuriyama
M. Satoh
Chul-Sung Kim
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Citations (22)
Doping of phosphorus in hydrogenated amorphous silicon by a neutron transmutation doping technique
1984
Applied Physics Letters
Hiromi Hamanaka
K. Kuriyama
M. Yahagi
M. Satoh
K. Iwamura
Chul-Sung Kim
Y. Kim
F. Shiraishi
K. Tsuji
S. Minomura
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Citations (11)
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