Ion channeling effect of In dopant in semi‐insulating GaAs

The channeling phenomena of undoped and In‐doped semi‐insulating GaAs grown by the liquid encapsulated Czochralski method have been analyzed by 1.5 MeV 4He+beam. It is suggested that the minimum yield of backscattering particles is affected by the local lattice distortion due to the addition of large amounts of In atoms rather than the difference in dislocation density. It is also indicated that the In atoms of ∼1020/cm3 doped in GaAs occupy substitutional sites within the statistical errors.