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Colossal Magnetoresistance
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The magnetoresistance (MR) effect is widely used in technologies that pervade the world, from magnetic reading heads to sensors. Diverse contributions to MR, such as anisotropic, giant, tunnel, colossal, and spin‐Hall, are revealed in materials depending on the specific system and measuring configuration. Half‐metallic manganites hold promise for spintronic applications but the complexity of competing interactions has not permitted the understanding and control of their magnetotransport properties to enable the realization of their technological potential. This study reports on the ability to induce a dominant switchable magnetoresistance in La 0.7 Sr 0.3 MnO 3 epitaxial films at room temperature (RT). By engineering an extrinsic magnetic anisotropy, a large enhancement of anisotropic magnetoresistance (AMR) is achieved which at RT leads to signal changes much larger than the other contributions such as the colossal magnetoresistance. The dominant extrinsic AMR exhibits large variation in the resistance in low field region, showing high sensitivity to applied low magnetic fields. These findings have a strong impact on the real applications of manganite‐based devices for the high‐resolution low field magnetic sensors or spintronics.
Colossal Magnetoresistance
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Colossal Magnetoresistance
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There is quite large magnetoresistance in perovskite - type rare - earth doped oxides which induce much interest with people for the complex physical mechanism and the potential in device applications. Therefore, the magnetic transition temperature of this kind of materials is usually lower than the room temperature and only high magnetic field can saturate them. In order to realize the magnetoresistance effects in room temperature or low magnetic field, many ways have been taken, such as preparing combined materials or nanosized polycrystalline samples. The structure and magnetoresistance effects as well as the probable mechanism of the magnetoresistance effects in the manganites system are introduced emphatically in this paper.
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The electrical resistance and magnetoresistance of La0.8Sr0.2FexCo1−xO3 (0.025⩽X⩽0.3) have been studied at low temperatures down to 1.5 K and magnetic fields up to 7.5 T. The large magnetoresistance at high and low temperature has been found. The magnetoresistance exhibits a broad minima in the temperature interval between 150 and 50 K for all the compositions. The large magnetoresistance and its broad minima may be interpreted as the interplay of spin state transition, Jahn–Teller distortion, and orbital ordering of Co ions.
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In this work,the magnetoresistance of La 0 67 Ca 0 33 Mn 1-x T xO 3(T=Fe or Ni)has been investigated in the low magnetic field range H≤0 8T.It has been found that the replacement of Mn by Fe lowers the low field magnetoresistance,but improves the behavior of linearity of low field magnetoresistance.Meanwhile the better low field large magnetoresistance change can be observed in the low addition of Ni(x=0 1)
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We have performed magnetization and magnetoresistance measurements on (110)La0.7Sr0.3MnO3 thin films in order to understand the role of in-plane uniaxial magnetic anisotropy in the magnetoresistance. Transport measurements with current flowing along the magnetically easy [001] and magnetically hard [11̄0] directions exhibit a linear dependence of magnetoresistance on field at high fields due to bulk colossal magnetoresistance. The low field behavior depends not only on the angle of the magnetization with the current but also the direction of the current in the crystal.
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In this paper, the potentialities of the manganese oxide compound La0.7Sr0.3MnO3 (LSMO) for the realization of sensitive room temperature magnetoresistive sensors are discussed. LSMO films deposited on various types of substrates having different magnetic anisotropies were patterned to form rectangular stripes of width 100 µm and length 300 µm. It is shown that, apart from the well-known colossal magnetoresistance contribution, the anisotropic magnetoresistance effects can be used to exhibit competitive performance at room temperature benefiting from the very low noise of LSMO thin films.
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An intrinsic characteristic of the “colossal” magnetoresistance manganite compounds is that the resistance and the magnetoresistance vary strongly with temperature over the small temperature regime in which the magnetoresistance is exceptionally large. We propose a heterostructure constructed of layers of varying composition manganites which extends the regime of large magnetoresistance and greatly broadens the sharp peak in resistance. Data from a prototype heterostructure are presented that demonstrate the effectiveness of this method.
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Colossal magnetoresistance (CMR), as the name implies, is the phenomenon of dramatic changes in resistance attendant upon application of a magnetic field. The typical CMR material is derived from perovskite manganites with the chemical formula Ln1−xAxMnO3, where Ln is the rare earth (Ln = La, Pr, Nd, Sm) and A is the divalent metal (A = Ca, Ba, Sr). The objective of this paper is to study the effects of the doping Nd and Pr at La site on La-Ba-Mn-O ceramics using solid state reaction. The characteristics and magnetotransport properties of CMR materials are investigated. Polycrystalline (La1−xPrx)0.67Ba0.33MnO3 (x = 0, 1/6, 1/3, 1/2, 2/3, 5/6, 1) and (La1−xPrx)0.67Ba0.33MnO3 (x = 0, 1/6, 1/3, 1/2, 2/3, 5/6, 1), are doped with Pr and Nd site based manganites, calcined at 900°C for 12 hours, pelletized and sintered at 1300°C for 24 hours have been synthesized and investigated. The magnetoresistance (MR) effects are measured using the four point probe technique. The magnetoresistance defined as MR% = (Ro−RH)/RH × 100 was measured at a magnetic field of H ≤ 1T at room temperature. The MR values were increased from 7.9–12.7% and from 7.9–12.3% for doping with Nd (x = 0.17) and Pr (x = 0.33) respectively. The electrical property, Tp was determined by using standard four-point probe resistivity measurement in a temperature range of 20 K to 300 K. The result shows that Pr and Nd dopants shift the value of TP to a lower temperature. In this paper the structural pattern and microstructure property of bulk samples have been investigated via XRD, AFM and SEM. XRD patterns show that these systems are in single-phase with orthorhombic distorted perovskite structures. The rms roughness for the AFM images has obtained for undoped and doped samples. SEM micrographs have shown that undoped samples are observed to be more compact than the doped samples doped due to the existence of pores. The potential of this research is to produce magnetoresistive read head such as read/write heads in computer disc-drives, position sensor, magnetoresistive random access memory (MRAM), biomagnetic sensor and magnetic accelerometers.
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We have studied the irreversible changes in the room temperature magnetoresistive properties of [Co(15Å)/Cu(9Å)]20 multilayer films after annealing at temperatures up to 300 °C. The maximum magnetoresistance was found to degrade with increasing annealing temperature and time, even at temperatures as low as 150 °C. The sensitivity to changes in the magnetic field also degraded upon annealing, but by a lesser amount due to the accompanying narrowing of the magnetoresistance versus field curves. The resistivity was estimated for the Co/Cu ML stack and the underlying Cu buffer layer before and after annealing at 240 °C. At the sacrifice of the maximum magnetoresistance and sensitivity, we find that we can improve the long-term stability of the magnetoresistive properties to long-term exposure at 150 °C (the upper operating temperature of a device) by annealing at elevated temperatures.
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