Low-voltage organic single-crystal field-effect transistors and inverters enabled by a solution processable high-kdielectric
Chunli MaBin LiYihan ZhangJiamin WangYing LiuLingjie SunXinzi TianJiarong YaoZhaofeng WangShuyu LiFangxu YangRongjin LiWenping Hu
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Low-voltage OFETs with excellent mobility, steep subthreshold swing, and low operating voltage were achieved simultaneously based on a novel solution-processable high- k dielectric.Keywords:
Crystal (programming language)
Organic field-effect transistor
Organic Field-Effect Transistors Due to their high sensitivity and selectivity, chemical sensors have gained significant attention in various fields. Research progress on organic field-effect transistor (OFET)-based chemical sensors focuses on the enhancement of sensor performance, including sensitivity, selectivity, and stability etc. The main improvement programs are improving the internal and external structures of the device, as well as the organic semiconductor layer and dielectric structure. More details can be found in article number 2302406 by Jia Huang, Jiangong Cheng, Yanyan Fu, and co-workers.
Organic field-effect transistor
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A field-effect transistor platform has been designed and fabricated from silicon that allows for the testing of organic semiconductors (OS) as potential materials for organic field-effect transistors (OFET) and as the gate conductor in chemically sensitive field-effect transistors (CHEMFET). Once the OS is deposited, the device can be operated in either mode. This platform should aid in the search for the semiconductor field effect in a variety of organic materials. The effects of contact resistance, surface conductivity, and gate leakage current have been demonstrated and analyzed. No semiconductor field effect has been observed in OFET mode using poly(phenylenesulfidephenyleneamine) as the organic semiconductor.
Organic field-effect transistor
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For the present work single-walled carbon nanotube (SWNT) field-effect transistors and field-effect transistors based on poly(3-hexylthiophene) were fabricated and used as protein sensors in aqueous environment. The stability of both transistor types in biological buffers was tested. Additionally the interactions of various proteins with ligands, were analyzed using SWNT transistors. Using biofunctionalized SWNT transistors the dissociation constants of a protein was probed and it was possible to distinguish between two different other proteins by their pH-dependent sensor response.
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We have investigated the influence of carrier injection on the characteristics of an organic field effect transistor (OFET) using a rubrene single crystal. The mobility estimated from the transfer characteristic of the OFET depended strongly on the channel length and the thickness of the rubrene single crystal although the mobility is intrinsically independent of the dimensions of an OFET. On the other hand, the temperature dependence of the saturation drain current was in good agreement with the thermal-field emission theory. These suggest that OFETs are controlled not only by the carrier accumulation at the channel but also by the carrier injection.
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Organic field-effect transistor
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Abstract Organic field-effect transistors (OFETs) are the technology of choice for flexible electronic devices such as active-matrix (AM) displays. However, despite the continuous improvement of charge carrier mobility in organic semiconductors, the performance of conventional OFETs is too poor for demanding electronic applications. Furthermore, hero-devices reported in literature often make use of processes (shadow mask fabrication, large channel width devices) which cannot be adapted in production lines, e.g. for AM displays. Here we present an OFET with a novel vertical device structure. It has static and dynamic transistor performance superior over conventional lateral organic transistors with regard to application in AM displays. We show that these vertical transistors can be integrated using processes well-established in the micro-electronic industry and thus offer seamless transfer into production lines. We discuss that these transistors obey scaling laws for footprint and capacitance which make them superior over other planar transistor devices. In combination with excellent device stability and uniformity, vertical OFET might enable ultra-high resolution flexible displays of the future.
Organic field-effect transistor
Organic semiconductor
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Organic field-effect transistors (OFETs) were fabricated using poly(3-hexyl thiophene) (P3HT), and the effects of inserted Lewis-acid thin layers on electrical properties were investigated. The OFETs have active layers of P3HT and vanadium pentoxide (V2O5) as a Lewis-acid layer. Larger drain currents were observed for the OFET with the V2O5 layer than that without the layer. The calculated field-effect mobility of the fabricated OFET was 1.4 × 10−2 cm2/(Vs), where as that of the OFET without the V2O5 layer was 6.2 × 10−3 cm2/(Vs). It was thought that charge transfer (CT) complex which was formed at the interface between P3HT and V2O5 layer was dissociated by gate voltage, and the generated holes seem to contribute to drain current and the apparent high mobility.
Organic field-effect transistor
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Attaining ambipolar charge transport in organic field-effect transistors (OFET) is highly desirable from both fundamental understanding and application points of view. We present the results of an approach to obtain ambipolar OFET with an active layer of organic semiconductor blends using semiconducting polymers in composite with fullerene derivatives. Clear features of forming the superposition of both hole and electron-enhanced channels for an applied gate field are observed. The present studies suggest a strong correlation of thin-film nanomorphology and ambipolar transport in field-effect devices.
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Organic field-effect transistor
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Room temperature magnetotransport experiments were carried out on field-effect transistors in magnetic fields up to 10 T. It is shown that measurements of the transistor magnetoresistance and its first derivative with respect to the gate voltage allow the derivation of the electron mobility in the gated part of the transistor channel, while the access/contact resistances and the transistor gate length need not be known. We demonstrate the potential of this method using GaN and Si field-effect transistors and discuss its importance for mobility measurements in transistors with nanometer gate length.
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Floating gate field-effect transistors (FETs) for the detection of extracellular signals from electrogenic cells were fabricated in a complementary metal oxide semiconductor process. Additional passivation layers protected the transistor gates from the electrolyte solution. To compare the signals from n- and p-FETs, two electronically separated, but locally adjacent transistors were combined to one measuring unit. The paired sensing area of this unit had the dimension of a single cell. Simultaneous recordings with n- and p-channel floating gate FETs from a single cell exhibited comparable amplitudes and identical time courses. The experiments indicate that both types of FETs express similar sensitivities.
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In this study, the conducting channel in poly(3-hexylthiophene) (P3HT) organic field effect transistors (OFETs) was investigated. The effect of varying the P3HT layer thickness on the OFET parameters was studied. The threshold voltage and the field effect mobility were determined from both the linear and saturation regime of the OFET output characteristics for all film thicknesses and the results are compared and discussed. A gated four probe technique was used to investigate the formation and evolution of the conducting channel by monitoring changes in potential at different points in the channel during measurement. It was found that the device performance of the OFETs was significantly influenced by the thickness of the P3HT layer. Bulk currents were found to dominate device performance for thicker P3HT layers.
Organic field-effect transistor
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