Correlation between morphology and ambipolar transport in organic field-effect transistors
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Attaining ambipolar charge transport in organic field-effect transistors (OFET) is highly desirable from both fundamental understanding and application points of view. We present the results of an approach to obtain ambipolar OFET with an active layer of organic semiconductor blends using semiconducting polymers in composite with fullerene derivatives. Clear features of forming the superposition of both hole and electron-enhanced channels for an applied gate field are observed. The present studies suggest a strong correlation of thin-film nanomorphology and ambipolar transport in field-effect devices.Keywords:
Ambipolar diffusion
Organic field-effect transistor
Organic semiconductor
Charge carrier
Ambipolar diffusion
Organic field-effect transistor
Electron Mobility
Copper phthalocyanine
Saturation (graph theory)
Organic semiconductor
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A low operating voltage (∼10 V) top contact-bottom gate ambipolar organic field-effect transistor (OFET) is fabricated using vacuum-deposited small molecules, SnCl2Pc and CuPc. The ambipolar OFET exhibits balanced carrier mobility and low bias-stress (characteristics time constant ∼105 s) for both n-channel and p-channels.
Ambipolar diffusion
Organic field-effect transistor
Biasing
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In this contribution we emphasise the ambipolar organic field-effect transistors (OFETs) as the prime element for the realization of various OFET types. It will be shown that ambipolar OFETs can be used to produce on the one hand complementary unipolar OFETs and thus CMOS elements and on the other hand light-emitting OFETs. Some ambipolar light-emitting OFETs will be presented and the impact of the contact formation at the source and drain electrodes on the device characteristics will be discussed. In general, the investigation of ambipolar OFETs provides a deep understanding of the OFET operation and guides the way to novel aspects of the OFET applicability.
Ambipolar diffusion
Organic field-effect transistor
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Attaining ambipolar charge transport in organic field-effect transistors (OFET) is highly desirable from both fundamental understanding and application points of view. We present the results of an approach to obtain ambipolar OFET with an active layer of organic semiconductor blends using semiconducting polymers in composite with fullerene derivatives. Clear features of forming the superposition of both hole and electron-enhanced channels for an applied gate field are observed. The present studies suggest a strong correlation of thin-film nanomorphology and ambipolar transport in field-effect devices.
Ambipolar diffusion
Organic field-effect transistor
Organic semiconductor
Charge carrier
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Ambipolar diffusion
Organic field-effect transistor
Organic semiconductor
Electron Mobility
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Ambipolar charge injection and transport are a prerequisite for a light-emitting organic fieldeffect transistor (OFET). Organic materials, however, typically show unipolar charge-carrier transport characteristics. Consequently, organic thin-film field-effect transistors based on a single material as active layer can typically either be operated as p- or as n-channel device. In this article we show that by using a heterostructure with pentacene as hole-transport and N,N′-Ditridecylperylene-3,4,9,10-tetracarboxylic diimide (PTCDI-C13H27) as electron-transport material, ambipolar characteristics, i.e., simultaneous p- and n-channel formation, can be observed in a single device. An OFET structure is investigated in which electrons and holes are injected from Mg top and Au bottom contacts into the PTCDI-C13H27 and pentacene layers, respectively. Our device exhibits electron and hole mobilities of 3×10−3 and 1×10−4 cm2/V s, respectively. This device architecture serves as a model structure for ambipolar field-effect transistors, which are a prerequisite for light-emitting field-effect transistors.
Ambipolar diffusion
Organic field-effect transistor
Pentacene
Organic semiconductor
Charge carrier
Electron Mobility
Diimide
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We demonstrated an ambipolar-type organic field-effect transistor (OFET) in a dual-gate configuration where two different layers of unipolar organic semiconductors (OSC) are stacked. In our OFET, the hole-channel for the p-type operation depends primarily on the corresponding gate insulator-OSC interface and the electron-channel for the n-type operation on the remaining interface in an independent manner. Using a combination of two independent gate voltages, the charge transport can be efficiently controlled and the on-off current ratio becomes enhanced in a dual-gate configuration. The optimization of the materials, the interfaces, and the device architectures will lead to a wide range of organic electronic applications.
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In article number 1600537, M. J. Ford et al. show that ambipolar polymer semiconductors can be solution processed with molecular additives to control their charge transport properties. The addititives act as carrier-selective traps, and the researchers show that selecting materials with the appropriate energy level offset can result in either n- or p-type transport from a single ambipolar polymer. Using this discovery, the fabricate efficient complementary inverters with high gain.
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The cover picture shows the potential profile along the channel of an ambipolar organic field effect transistor (OFET), which is key to understanding the device operation, as explained on p. 1547 by M. S. Kang and C. D. Frisbie.
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Organic field-effect transistor
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Ambipolar diffusion
Organic semiconductor
HOMO/LUMO
Charge carrier
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