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    P-type GaSb and GaInSb Layers Grown By Metalorganic Vapor Phase Epitaxy Using Silane as the Dopant Source
    H. EhsaniI. BhatR.J. GutmannG.W. Charache
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    Abstract:
    temperature is lowered. This is explained by the presence of second band close to the conduction band minima. Silane which is a common n type dopant in GaAs and other III-V systems is shown to behave like p type in GaInSb. P-n junction structures have been grown on GaSb substrates to fabricate TPV cells.
    Keywords:
    Vapor phase
    Topics:
    Semiconductor Quantum Structures and Devices
    Semiconductor materials and interfaces
    solar cell performance optimization
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