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    Effects of quality of SiO 2 mask on epitaxial lateral overgrowth of GaN by hydride vapor phase epitaxy
    The Japan Society of Applied Physics (2015)
    Shin Goubara
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    Keywords:
    Vapor phase
    Topics:
    GaN-based semiconductor devices and materials
    Ga2O3 and related materials
    Thin-Film Transistor Technologies
    Atomic structure of GaN(0001) surface in oxide vapor phase epitaxy of GaN
    The Japan Society of Applied Physics (2016)
    Takahiro KawamuraAkira KitamotoMamoru ImadeMasashi YoshimuraYusuke Mori
    Vapor phase
    Citations (0)
    Mask width dependence of selective growth of GaN and mechanism of facet formation via Hydride Vapor Phase Epitaxy
    The Japan Society of Applied Physics (2016)
    Shin GoubaraKota YukizaneTohoru MatsubaraNorihiro ItagakiRyo Inomoto
    Facet (psychology)
    Vapor phase
    Citations (0)
    Distribution of Threading Dislocations in Epitaxial Lateral Overgrowth GaN by Hydride Vapor-Phase Epitaxy Using Mixed Carrier Gas of H2and N2
    Japanese Journal of Applied Physics (2002)
    S. BohyamaKenji YoshikawaH. NaoiHideto MiyakeKazumasa Hiramatsu
    Distribution of threading dislocations (TDs) in epitaxial lateral overgrowth (ELO) GaN by hydride vapor-phase epitaxy (HVPE) has been investigated. Two types of carrier gas, i.e., N2 and H2+N2, were used in the HVPE in order to change the facet structure of the ELO layer. Results of cathodoluminescence (CL) mapping and HCl vapor-phase etching revealed lower TD density in the ELO layer grown using the H2+N2 mixed carrier gas than that using the N2 carrier gas.
    Cathodoluminescence
    Vapor phase
    Citations (12)
    Distribution of Threading Dislocations in Epitaxial Lateral Overgrowth GaN by Hydride Vapor-Phase Epitaxy Using Mixed Carrier Gas of H_2 and N_2(Semiconductors)
    Japanese journal of applied physics. Pt. 1, Regular papers & short notes (2002)
    S. BohyamaKenji YoshikawaH. NaoiHideto MiyakeKazumasa Hiramatsu
    Vapor phase
    Citations (0)
    Growth of a-Plane GaN Films on r-Plane Sapphire by Combining Metal Organic Vapor Phase Epitaxy with the Hydride Vapor Phase Epitaxy
    中国物理快报：英文版 (2015)
    姜腾许晟瑞张进城林志宇蒋仁渊
    Vapor phase
    Citations (0)
    Structural evolution of GaN layers grown on (0001) sapphire by hydride vapor phase epitaxy
    Journal of Crystal Growth (2011)
    Fanyu MengI. HanH. McFeleaE. LindowR. Bertram
    Wurtzite crystal structure
    Vapor phase
    Citations (3)
    Hydride Vapor Phase Epitaxy of Thick GaN Layers on ScAlMgO 4 Substrates and their Self-Separation Process
    The Japan Society of Applied Physics (2017)
    Kazuki OhnishiMasaya KanohTomoyuki TanikawaShigeyuki KuboyaTakashi Mukai
    Vapor phase
    Citations (0)
    Hydride vapor phase epitaxy system for bulk gan layers deposition
    NAUCHNOE PRIBOROSTROENIE (2018)
    V. V. VORONENKOVN. I. BochkarevaM. V. Virko
    Николай Иванович Комяк, организатор отечественного рентгеновского приборостроения, ученый и человек (к 90-летнему юбилею) Комяк Николай Иванович (10.10.1928-28.05.2000 гг.) родился в дер.Живоглодовичи (Минская область).Окончил факультет электронной техники ЛЭТИ им.В
    Vapor phase
    Deposition
    Citations (0)
    Growth condition dependence of selective area growth with wide open window mask for growth of GaN by hydride vapor phase epitaxy
    The Japan Society of Applied Physics (2017)
    Hiroki IkeuchiNaoto IshibashiKota YukizaneTatsuya EzakiKohei Nojima
    Vapor phase
    Citations (0)
    Preparation of Porous GaN Buffer and Its Influence on the Residual Stress of GaN Epilayers Grown by Hydride Vapor Phase Epitaxy
    Journal of Material Science and Technology (2009)
    Xinhua LiKai QiuFei ZhongZhijun YinChangjian Ji
    Vapor phase
    Citations (0)