Heterogeneous III-V/silicon photonic integrated circuits
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In this paper we review our work in the field of III-V/silicon photonic integrated circuits operating in the communication wavelength window. Heterogeneously integrated lasers on silicon waveguide circuits using adhesive and molecular bonding are described.Keywords:
Hybrid silicon laser
Waveguide
Silicon photonics is expected to reduce size and cost of photonic devices and realize large scale photonic integrated circuits for telecom and datacom applications. In this paper, we demonstrate a compact wavelength tunable laser module using hybrid integrated semiconductor optical amplifier and silicon waveguide resonators. The power consumption of the laser module is 1 W to obtain +8 dBm fiber coupled power under the module temperature of 70°C. Such integration technology broadens design flexibility of silicon-based photonic devices and their applications.
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We review recent advances in heterogeneous silicon photonic integration technology and components and describe progress in silicon photonic integrated circuits. Techniques for laser integration and the impact of active silicon photonic integrated circuits could have on interconnects, telecommunications and silicon electronics are reviewed.
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In this paper we review our work in the field of III-V/silicon photonic integrated circuits operating in the communication wavelength window. Heterogeneously integrated lasers on silicon waveguide circuits using adhesive and molecular bonding are described.
Hybrid silicon laser
Waveguide
Cite
Citations (4)
In this paper we review our work in the field of III-V/silicon photonic integrated circuits operating in the communication wavelength window. Heterogeneously integrated lasers on silicon waveguide circuits using adhesive and molecular bonding are described.
Hybrid silicon laser
Waveguide
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We review recent breakthroughs in the silicon photonic technology and components, and describe progress in silicon photonic integrated circuits. Heterogeneous silicon photonics has recently demonstrated performance that significantly outperforms native III/V components. The impact active silicon photonic integrated circuits could have on interconnects, telecommunications, sensors, and silicon electronics is reviewed.
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Through heterogeneous integration of III-V materials on Silicon, new optical functions on Si circuits have been studied for the last decade. An important issue is the development of efficient laser sources, for both guided and free space emission. Low threshold combined to small footprints are required for silicon photonics applications.
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We review recent advances in heterogeneous silicon photonic integration technology and components and describe progress in silicon photonic integrated circuits. Techniques for laser integration and the impact of active silicon photonic integrated circuits could have on interconnects, telecommunications and silicon electronics are reviewed. A variety of materials are being heterogeneously integrated, including arsenides for short wavelength lasers, phosphides for infrared lasers, LiNbO 3 for nonlinear applications and YIG for isolators and circulators.
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III-V/silicon photonic integrated circuits (ICs) promise to enable low cost and miniature optical sensors for trace-gas detection, bio-sensing and environmental monitoring. A lot of these applications can benefit from the availability of photonic ICs beyond the telecommunication wavelength range. The 2 μm wavelength range is of interest for spectroscopic detection of many important gases and blood constituents. In this contribution we will present 2 μmwavelength-range III-V/silicon photonic ICs consisting of tunable laser sources, photodetectors and silicon waveguide circuits. Silicon waveguides with a loss of ~0.5 dB/cm are obtained in a well-established silicon photonics platform. Based on the waveguides, low insertion loss (2-3 dB) and low crosstalk (25-30 dB) arrayed waveguide gratings (AWGs) are realized for the 2.3 μm wavelength range. Active opto-electronic components are integrated on the photonic IC by the heterogeneous integration of an InP-based type-II epitaxial layer stack on silicon. III-V-on-silicon 2.3 μm range distributed feedback (DFB) lasers can operate up to 25 °C in continuous-wave regime and shows an output power of 3 mW. By varying the silicon grating pitch, a DFB laser array with broad wavelength coverage from 2.28 μm to 2.43 μm is achieved. III-V-on-silicon photodetectors with the same epitaxial layer stack exhibit a responsivity of 1.6 A/W near 2.35 μm. In addition, we also report a 2 μm range GaSb/silicon hybrid external cavity laser using a silicon photonic IC for wavelength selective feedback. A wavelength tuning over 58 nm and side mode suppression ratio better than 60 dB is demonstrated.
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Photonic integration by hybrid silicon/silica waveguide systems is attractive for realizing various optical devices and optical integrated circuits. Silicon waveguides and silica-based waveguides have complementary characteristics, although those waveguides can be formed on identical SOI wafers by a CMOS compatible process. Therefore, photonic integration by a hybrid silicon/silica waveguide system was proposed. We introduce the concept and a photonic integration method with these waveguide systems. We also investigated both the low-loss waveguide junction and the hetero waveguide crossing between Si-wire waveguides and silica-based waveguides. Finally, we introduce optical devices and circuits with the hybrid silicon/silica waveguide system.
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This talk presents my group's progress in foundry-compatible multilayer silicon nitride-on-silicon integrated photonic platforms. Silicon nitride enables improved passive photonic components that can be integrated with active components in the silicon layer, including highly efficient modulators, high-speed photodetectors, and potentially hybrid lasers. Multilayer platforms also allow for new device geometries for grating couplers and polarization rotator splitters that take advantage of the strong optical coupling between the waveguide levels. Further, multilayer platforms make possible extraordinarily low loss over/under-pass types of crossings. Taken together, these capabilities make multilayer silicon nitride-on-silicon photonic platforms ideal for the implementation of very large-scale, three-dimensional silicon photonic circuits, which are needed for applications such as optical switching and phased arrays.
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