High‐Performance n‐Channel Printed Transistors on Biodegradable Substrate for Transient Electronics
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Abstract Innovative methods to fabricate and integrate biodegradable high‐grade electronics on green substrates are needed for the next generation of robust high‐performance transient electronics. This is also needed to alleviate the growing problem of electronic waste (e‐waste). Herein, the authors present the n‐channel silicon (Si) nanoribbons‐based high‐performance transistors developed on biodegradable metal (magnesium) foils using the direct transfer printing method. The developed transistors present high effective mobility of >600 cm 2 V −1 s −1 , high on/off current ratio ( I on / off ) of >10 4 , negligible hysteresis, transconductance of 0.19 mS, and an on‐current of 1.6 mA at a bias of 2 V. Further, the transistors show stable device performance under temperature stress (5–50 °C), gate‐bias stress, continuous long‐term transfer scans for 24 h (>3000 cycles), and aging test (up to 100 days) demonstrating the excellent potential for futuristic high‐performance robust transient devices and circuits. Finally, the effect of transience on the electrical functioning of devices on Mg foils (at pH 8) and degradation of Mg foils at different pH values is studied by hydrolysis. The outcome from these experiments demonstrates the potential of direct transfer printing for high‐performance transient electronics and also as the new avenue toward zero e‐waste.Keywords:
Transconductance
Transient (computer programming)
Printed Electronics
Transfer printing
Abstract Innovative methods to fabricate and integrate biodegradable high‐grade electronics on green substrates are needed for the next generation of robust high‐performance transient electronics. This is also needed to alleviate the growing problem of electronic waste (e‐waste). Herein, the authors present the n‐channel silicon (Si) nanoribbons‐based high‐performance transistors developed on biodegradable metal (magnesium) foils using the direct transfer printing method. The developed transistors present high effective mobility of >600 cm 2 V −1 s −1 , high on/off current ratio ( I on / off ) of >10 4 , negligible hysteresis, transconductance of 0.19 mS, and an on‐current of 1.6 mA at a bias of 2 V. Further, the transistors show stable device performance under temperature stress (5–50 °C), gate‐bias stress, continuous long‐term transfer scans for 24 h (>3000 cycles), and aging test (up to 100 days) demonstrating the excellent potential for futuristic high‐performance robust transient devices and circuits. Finally, the effect of transience on the electrical functioning of devices on Mg foils (at pH 8) and degradation of Mg foils at different pH values is studied by hydrolysis. The outcome from these experiments demonstrates the potential of direct transfer printing for high‐performance transient electronics and also as the new avenue toward zero e‐waste.
Transconductance
Transient (computer programming)
Printed Electronics
Transfer printing
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Inkjet Printed, High Mobility Inorganic-Oxide Field Effect Transistors Processed at Room Temperature
Printed electronics (PE) represents any electronic devices, components or circuits that can be processed using modern-day printing techniques. Field-effect transistors (FETs) and logics are being printed with intended applications requiring simple circuitry on large, flexible (e.g., polymer) substrates for low-cost and disposable electronics. Although organic materials have commonly been chosen for their easy printability and low temperature processability, high quality inorganic oxide-semiconductors are also being considered recently. The intrinsic mobility of the inorganic semiconductors are always by far superior than the organic ones; however, the commonly expressed reservations against the inorganic-based printed electronics are due to major issues, such as high processing temperatures and their incompatibility with solution-processing. Here we show a possibility to circumvent these difficulties and demonstrate a room-temperature processed and inkjet printed inorganic-oxide FET where the transistor channel is composed of an interconnected nanoparticle network and a solid polymer electrolyte serves as the dielectric. Even an extremely conservative estimation of the field-effect mobility of such a device yields a value of 0.8 cm(2)/(V s), which is still exceptionally large for a room temperature processed and printed transistor from inorganic materials.
Printed Electronics
Electron Mobility
Flexible Electronics
Organic semiconductor
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Exploration of high-performance solution-processed n-channel organic transistors with excellent stability is a critical issue for the development of powerful printed circuits. Solution-processed, bottom-gate transistors exhibiting a record electron mobility of up to 1.2 cm2 V−1 s−1 are reported. The devices show excellent stability, which enables the construction of all-solution-processed flexible circuits with all fabrication procedures performed in air. Detailed facts of importance to specialist readers are published as "Supporting Information". Such documents are peer-reviewed, but not copy-edited or typeset. They are made available as submitted by the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.
Organic Electronics
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In this study, AlGaN/GaN‐based heterostructure field effect transistor (HFET) was simulated by using ISE TCAD software. The effects of varying thickness, substrate type and doping channel levels were investigated. The device output characteristics of drain current and voltage with various gate biases were presented. A maximum drain current and extrinsic transconductance were achieved with AlGaN HFET grown on AlN/SiC substrate. The device performance can be improved by optimizing the substrate type and heavily doped channel layer which will reduce the contact resistance and enhance the transconductance. All results are comparable with the experimental results obtained by other researchers.
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Wide-bandgap semiconductor
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Taking account of the bulk charge and a finite substrate-source e.m.f., expressions are derived for the substrate and gate transconductances of a metal-oxide-semiconductor (m.o.s.) transistor. Comparison with experimental results indicates some discrepancies, but these appear to be no greater than would be expected of a first-order theory. A brief discussion of the factors affecting the substrate transconductance is given.
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Resonant-tunneling transistors (RTTs) are emerging as promising functional devices for achieving high functionality and reduced circuit complexity in integrated circuits. Many RTTs have been proposed and demonstrated. Most of these concepts are based on integrating a resonant tunneling diode (RTD) structure into one or more terminals of conventional transistors. In this paper, we demonstrate an InP-based resonant-tunneling high electron mobility transistor (RTHEMT) which integrates a pseudomorphic In/sub 0.53/Ga/sub 0.47/As-AlAs-InAs RTD into the source of a non-alloyed ohmic contact InAlAs-InGaAs HEMT. Employing the non-alloyed ohmic contact cap layer structure in the HEMT significantly reduces the interconnection resistance between the RTDs and the HEMTs, and therefore, high P/V ratios and small hysteresis are maintained in the output characteristics. The device exhibits both pronounced negative differential resistance (NDR) and negative transconductance at room temperature. Most importantly, a near-flat valley current is obtained in the output I-V characteristics at certain gate voltages. This unique feature of flat valley current leads to the observation of pronounced negative transconductance throughout a wide bias range. As a result RTHEMTs can be used for many circuit applications.
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Ohmic contact
Resonant-tunneling diode
Electron Mobility
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Flexible electronics have customarily addressed low-frequency applications because the traditional materials for flexible electronics, such as polymer and non-crystalline inorganic semiconductors, have poor electronic properties. Fast flexible electronics that operate at radio frequencies (RF), particularly at microwave frequencies, could lead to a number of novel RF applications that rigid chip based solid-state electronics cannot easily fulfill. Single-crystal semiconductor nanomembranes that can be released from a number of wafer sources are mechanically very flexible and exhibit outstanding electronic properties that are equivalent to those of their bulk counterparts. These thin, flexible single-crystal materials can furthermore be placed, via transfer printing techniques, onto nearly any substrate, including flexible polymers, thus creating the opportunity to realize RF flexible electronics. In this paper, we will present various RF transistors made of semiconductor nanomembranes on plastic substrates, along with RF passives fabricated on the same flexible substrates. We will also elaborate on the difference between such flexible electronics and those made from thinned rigid wafers.
Flexible Electronics
Transfer printing
Printed Electronics
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Flexible electronics are of great interest in the fields of wearable electronics, Internet of Things (IoT) concept, and others, which require to monitor distribution of information from the surfaces. To realize the flexible electronics, a lot of developments are still required to achieve low-cost, macroscale, and high performance components on a flexible and/or stretchable film. In this study, inorganic-based flexible transistor devices are discussed using mainly nanomaterials on a flexible film. In addition to the flexible circuits, chemical sensor applications using an ion-sensitive field-effect transistor and charge-coupled device (CCD) are proposed.
Flexible Electronics
Wearable Technology
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Abstract Paper is drawing considerable attention as a possible alternative to plastic for the development of flexible electronics. Indeed, in order to reduce excessive plastic consumption and waste, paper is attractive thanks to its renewable nature, low cost, ubiquity, and flexibility. A simple, cost‐effective, and low‐temperature approach, based on inkjet‐printing, is presented for the development of low‐voltage, all‐organic field‐effect transistors on commercial paper. Both n‐ and p‐type transistors are developed with reproducible electrical performances, such as low operating voltages (not exceeding 5 V) and quasi‐zero threshold voltages. Moreover, the fabricated devices are characterized by a remarkable mechanical stability, as they can be deformed even at small bending radii without any significant degradation of their performances. Finally, as a proof‐of‐concept for this technology, complementary electronic circuits are fabricated and tested as basic building blocks for future development of complex flexible electronics on paper.
Printed Electronics
Flexible Electronics
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This paper elaborated concepts and relationship between the three types of printed circuits,printed electronics and electronic circuits.The electronic circuits include printed circuits and printed electronics,printed circuits is developing to the printed electronics and electronic circuits.The Printed circuit industry should be concerned about the printed electronics and electronic circuits.
Printed Electronics
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