Effect of Oersted field on the localized droplet mode and propagating spin waves mode excited in spin-torque nano-oscillator
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Spin wave
Precession
Spin-transfer torque
Oscillation (cell signaling)
Molecular spintronics is a new and emerging sub-area of spintronics that can benefit from the achievements obtained in molecular electronics and molecular magnetism. The two major trends of this area are the design of molecular analogs of the inorganic spintronic structures, and the evolution towards single-molecule spintronics. The former trend opens the possibility to design cheaper spintronic devices compatible with plastic technology, while the second takes advantage of the possibility to tailor molecules with control down to the single spin. In this highlight these two trends will be compared with the state-of-the-art achieved in the conventional inorganic spintronic systems.
Molecular Electronics
Magnetism
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As spintronics continues to replace conventional electronics, devices that produce oscillatory signals are needed in particular. They are usually based on spin-transfer torque, but this study offers an alternative, based on feedback of spin current into a magnetic tunnel junction (MTJ). A combination of thermal fluctuations, magnetoresistance, and the spin Hall effect can induce periodic precessional states in the MTJ's free layer, significantly reducing the critical current for oscillations and improving their quality factor.
Spin-transfer torque
Tunnel magnetoresistance
Spin Current
Spin pumping
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Spin wave
Spinplasmonics
Spin pumping
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The development of spintronics and spintronic devices, the applications of spintronic devices as well as the research subjects and current status on semiconductor spintronics are reviewed. Our research results on the relaxation of polarization and coherence of electron spin are given for GaAs.
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In this article we have reviewed the role of oxides in spintronics research, and specifically how these materials stand to further improve the efficiencies and capabilities of spin injection for active spintronic device development. The use of oxides in spintronics is advantageous in that they are stable in air, can be easily modified, and can possess a wide variety of properties which are beneficial to spintronics applications. This paper delineates the progression of spintronics and shows how applying oxide systems, in the form of half-metallic LaSrMnO3, the diluted magnetic semiconductor ZnO:Co, and diluted magnetic dielectrics CeO2:Co and Sm2O3:Co, has influenced and improved spintronics capabilities. An outline of the future potential for oxides in the realm of organic spintronic devices is also given
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The spin-wave transportation through a transverse magnetic domain wall (DW) in a magnetic nanowire is studied. It is found that the spin wave passes through a DW without reflection. A magnon, the quantum of the spin wave, carries opposite spins on the two sides of the DW. As a result, there is a spin angular momentum transfer from the propagating magnons to the DW. This magnonic spin-transfer torque can efficiently drive a DW to propagate in the opposite direction to that of the spin wave.
Spin-transfer torque
Domain wall (magnetism)
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Abstract Spintronics is one of the most promising next generation information technology, which uses the spins of electrons as information carriers and possesses potential advantages of speeding up data processing, high circuit integration density, and low energy consumption. However, spintronics faces a number of challenges, including spin generation and injection, long distance spin transport, and manipulation and detection of spin orientation. In solving these issues, new concepts and spintronics materials were proposed one after another, such as half metals, spin gapless semiconductors, and bipolar magnetic semiconductors. Topological insulators can also be viewed as a special class of spintronics materials, with their surface states used for pure spin generation and transportation. In designing these spintronics materials, first-principles calculations play a very important role. This article attempts to give a brief review of the basic principles and theoretical design of these materials. Meanwhile, we also give some attentions to the antiferromagnetic spintronics, which is mainly based on antiferromagnets and has aroused much interest in recent years.
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The interaction between the propagating spin waves and the current driven motion of a transverse domain wall in magnetic nanowires is studied by micromagnetic simulations. If the speed of domain walls due to current induced spin transfer torque is comparable to the velocity driven by spin waves, the speed of domain wall is improved by applying spin waves. The domain wall velocity can be manipulated by the frequency and amplitude of spin waves. The effect of spin waves is suppressed in the high current density regime in which the domain wall is mostly driven by current induced spin transfer torque.
Spin wave
Domain wall (magnetism)
Spin-transfer torque
Micromagnetics
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We develop a self-consistent theory for current-induced spin-wave excitations in normal metal-magnetic insulator bilayer structures. We compute the spin-wave dispersion and dissipation, including dipolar and exchange interactions in the magnet, the spin diffusion in the normal metal, as well as the surface anisotropy, spin-transfer torque, and spin pumping at the interface. We find that (1) the spin-transfer torque and spin pumping affect the surface modes more than the bulk modes; (2) spin pumping inhibits high-frequency spin-wave modes, thereby redshifting the excitation spectrum; (3) easy-axis surface anisotropy induces a new type of surface spin wave, which reduces the excitation threshold current and greatly enhances the excitation power. We propose that the magnetic insulator surface can be engineered to create spin-wave circuits utilizing surface spinwaves as information carriers.
Spin wave
Spin pumping
Spin-transfer torque
Spinplasmonics
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