Poling procedures and piezoelectric response of (Ba0.85Ca0.15Zr0.1T0.9)O3 ceramics
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The goal of the current report was to find the optimal poling conditions: poling field, poling time and poling temperature for lead-free (Ba0.85Ca0.15Zr0.1T0.9)O3 ceramic. It has been noticed that the low poling field (< 2 kV/mm) was insufficient for obtaining ideal poling state (θ = 90°) due to the incomplete switching of domains and thus low piezoelectric properties (d33 ≤ 438 pC/N and kp ≤ 49%). However, relevance of higher poling voltage (> 2 kV/mm) may induce electric breakdown and physical defects such as cracks in the sample, which also leads degradation of piezoelectric properties. The optimal poling field, poling time and poling temperature was found to be 2 kV/mm, 10 min and 24°C, i.e., near room temperature, respectively to achieve nearly ideal poling state (θ = 86°) obtained by impedance spectra, and thus enhanced piezoelectric constant d33 = 505 pC/N and kp = 56% at room temperature. The O-T phase transition point was identified at 32.6°C, for which a peak value of d33(E=0V) = 622 pm/V was realized.Keywords:
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Since polarization has remarkable effect on the strain capacity and 90°domain-rotation rate of the piezoelectric ceramics,thus affecting the performance of its piezoelectric,the poling technique of 0.98Na0.5Bi0.5TiO3-0.02NaNbO3 piezoelectric ceramics was studied.The results shows that the piezoelectric properties of 0.98Na0.5Bi0.5TiO3-0.02NaNbO3 piezoelectric ceramics has remarkable improved when the poling electric field was 4kV/mm,the poling temperature was 120℃ and the poling time was 25min.
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Abstract Lead-based ferroelectric thin films, PT and PZT, have been deposited on platinized silicon substrates by using rf magnetron sputtering technique. Whatever the deposition network, the piezoelectric character has been demonstrated for all films. The piezoelectric response dependence of the poling treatment with the time and the applied dc electric field has been studied. The in-situ deposited films, without previous poling, present piezoelectric activity e31PT=-0.49 C/m2. The post-annealed films have a slight piezoelectric activity without poling treatment and maximum values of the piezoelectric coefficients have been obtained, e31PT=-0.41 C/m2 and e31PZT=-3.84 C/m2 with dc electric field of 100 and 150 kV/cm respectively. The piezoelectric responses are directly related to the structure of the films, they are discussed in terms of domain orientation during the films formation and during the poling treatment.
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In the poling process of PZT ceramics, the poling temperature is a critical condition. When the poling temperature is too low, no matter how high is the poling field and how long is the poling time, the planar electromechanical coupling factor k p is lower. When the poling temperature is higher enough, the k p can reach to a saturated value with a lower poling field and short poling time. The variation of dielectric constant with the poling conditions is the same as that of planar electromechanical coupling factor. When poling with a low temperature, the dielectric constant after poling is lower than 1400. When poling with higher temperature, no matter how high is the poling field and how long is the poling time, the dielectric constant after poling is higher than 1500.
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The goal of the current report was to find the optimal poling conditions: poling field, poling time and poling temperature for lead-free (Ba0.85Ca0.15Zr0.1T0.9)O3 ceramic. It has been noticed that the low poling field (< 2 kV/mm) was insufficient for obtaining ideal poling state (θ = 90°) due to the incomplete switching of domains and thus low piezoelectric properties (d33 ≤ 438 pC/N and kp ≤ 49%). However, relevance of higher poling voltage (> 2 kV/mm) may induce electric breakdown and physical defects such as cracks in the sample, which also leads degradation of piezoelectric properties. The optimal poling field, poling time and poling temperature was found to be 2 kV/mm, 10 min and 24°C, i.e., near room temperature, respectively to achieve nearly ideal poling state (θ = 86°) obtained by impedance spectra, and thus enhanced piezoelectric constant d33 = 505 pC/N and kp = 56% at room temperature. The O-T phase transition point was identified at 32.6°C, for which a peak value of d33(E=0V) = 622 pm/V was realized.
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UV-written planar silica waveguides are poled using two different poling techniques, thermal poling and UV-poling. Thermal poling induces an electro-optic coefficient of 0.067 pm/V. We also demonstrate simultaneous UV-writing and UV-poling. The induced electro-optic effect shows a linear dependence on the poling voltage. No measurable decay in the induced electro-optic effect was detected after 14 months.
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