Tunable Noncollinear Antiferromagnetic Resistive Memory through Oxide Superlattice Design
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A central challenge in the burgeoning field of antiferromagnetic spintronics is to find materials with an antiferromagnetic state that can be both controlled and read out. To address this challenge, the authors create artificial La${}_{0.67}$Sr${}_{0.33}$MnO${}_{3}$/LaNiO${}_{3}$ superlattices that are $n\phantom{\rule{0}{0ex}}e\phantom{\rule{0}{0ex}}a\phantom{\rule{0}{0ex}}r\phantom{\rule{0}{0ex}}l\phantom{\rule{0}{0ex}}y$ antiferromagnetic, featuring a state that can be controlled with a small external magnetic field and read out via resistance measurements. This approach introduces ferromagnetlike controllability in an antiferromagnetic system, in a tunable manner, without sacrificing the advantageous properties (such as low stray fields) of antiferromagnetism.Keywords:
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A central challenge in the burgeoning field of antiferromagnetic spintronics is to find materials with an antiferromagnetic state that can be both controlled and read out. To address this challenge, the authors create artificial La${}_{0.67}$Sr${}_{0.33}$MnO${}_{3}$/LaNiO${}_{3}$ superlattices that are $n\phantom{\rule{0}{0ex}}e\phantom{\rule{0}{0ex}}a\phantom{\rule{0}{0ex}}r\phantom{\rule{0}{0ex}}l\phantom{\rule{0}{0ex}}y$ antiferromagnetic, featuring a state that can be controlled with a small external magnetic field and read out via resistance measurements. This approach introduces ferromagnetlike controllability in an antiferromagnetic system, in a tunable manner, without sacrificing the advantageous properties (such as low stray fields) of antiferromagnetism.
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Antiferromagnetic spintronics exploits unique properties of antiferromagnetic materials to create new and improved functionalities in future spintronic applications. Here, we briefly review the experimental efforts in our group to unravel spin transport properties in antiferromagnetic materials. Our investigations were initially focused on metallic antiferromagnets, where the first evidence of antiferromagnetic spin-transfer torque was discovered. Because of the lack of metallic antiferromagnets, we then shifted towards antiferromagnetic Mott insulators, where a plethora of transport phenomena was found. For instance, we observed a very large anisotropic magnetoresistance, which can be used to detect the magnetic state of an antiferromagnet. We also observed reversible resistive switching and now provide unequivocal evidence that the resistive switching is associated with structural distortions driven by an electric field. Our findings support the potential of electrically controlled functional oxides for various memory technologies.
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We show that it is possible to control the gap between the minibands of a superlattice by introducing positive barriers in the wells of the superlattice. An appropriate choice of the position, the width, and the height of these barriers achieved by standard methods can reduce or even close the minigaps of the superlattice.
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Antiferromagnetic materials are promising for future spintronic applications owing to their intrinsic appealing properties like zero stray field and ultrafast dynamics. In the past decade, a lot of research has been devoted to unraveling spin transport properties in antiferromagnetic materials. It has been realized that antiferromagnets have more to offer than just being used as passive components in exchange bias applications. Especially, the recent demonstrations of electrical manipulation and detection of antiferromagnetic spins opens a new chapter in the story of spintronics. This paradigm shift provides possibilities for radically new concepts for spin control in electronics. Here, we firstly introduce the antiferromagnetic materials suitable for antiferromagnetic spintronics and their fundamental properties. Then the manipulations of antiferromagnetic states including magnetic, strain, optical, and electrical methods, and the intrinsic origins of different antiferromagnets are presented. Finally, we focus on the topological antiferromagnetic spintronics that is exploring the links between antiferromagnetic spintronics and topological structures in real and momentum space.
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LaNiO₃ thin films were fabricated on various substrates by spin-coating technique using metal naphthenates as starting materials. Highly-oriented LaNiO₃ films with smooth and crack-free surfaces were grown on SrTiO₃ (100) and LaAlO₃ (100) substrates, while films on MgO (100) and Si (100) substrates showed random orientation. In this study, we conclude that lattice-mismatches between LaNiO₃ films and substrates used affect film's properties.
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There has been great interest in the conducting metal oxide LaNiO_3 films, which are widely utilized as electrode and buffer layers. In most studies, they are taken granted as being of good physical and chemical stabilities. However, in this study, thin LaNiO_(3-x) films with pseudo-cubic (100) preferred orientation were prepared by RF magnetron sputtering, and were in situ annealed. Results show that the LaNiO_3 films were not stable after annealing at temperature of 265 °C. Oxygen concentration in lattice decreased 2.7% after 2 hours annealing. The oxygen loss did not affected the structure of films. Their electric conductivities, optical refractive indexes and extinction coefficients were decreasing obviously as annealing time increased. Meanwhile, an explanation for our results also is provided according to the conduction mechanism of LaNiO_3 films.
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Amongst the rare-earth perovskite nickelates, LaNiO$_3$ (LNO) is an exception. While the former have insulating and antiferromagnetic ground states, LNO remains metallic and non-magnetic down to the lowest temperatures. It is believed that LNO is a strange metal, on the verge of an antiferromagnetic instability. Our work suggests that LNO is a quantum critical metal, close to an antiferromagnetic quantum critical point (QCP). The QCP behavior in LNO is manifested in epitaxial thin films with unprecedented high purities. We find that the temperature and magnetic field dependences of the resistivity of LNO at low temperatures are consistent with scatterings of charge carriers from weak disorder and quantum fluctuations of an antiferromagnetic nature. Furthermore, we find that the introduction of a small concentration of magnetic impurities qualitatively changes the magnetotransport properties of LNO, resembling that found in some heavy-fermion Kondo lattice systems in the vicinity of an antiferromagnetic QCP.
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In this article we have reviewed the role of oxides in spintronics research, and specifically how these materials stand to further improve the efficiencies and capabilities of spin injection for active spintronic device development. The use of oxides in spintronics is advantageous in that they are stable in air, can be easily modified, and can possess a wide variety of properties which are beneficial to spintronics applications. This paper delineates the progression of spintronics and shows how applying oxide systems, in the form of half-metallic LaSrMnO3, the diluted magnetic semiconductor ZnO:Co, and diluted magnetic dielectrics CeO2:Co and Sm2O3:Co, has influenced and improved spintronics capabilities. An outline of the future potential for oxides in the realm of organic spintronic devices is also given
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Antiferromagnets as active elements of spintronics can be faster than their ferromagnetic counterparts and more robust to magnetic noise. Owing to the strongly exchange-coupled magnetic sublattice structure, antiferromagnetic order parameter dynamics are qualitatively different and thus capable of engendering novel device functionalities. In this review, we discuss antiferromagnetic textures -- nanoparticles, domain walls, and skyrmions, -- under the action of different spin torques. We contrast the antiferromagnetic and ferromagnetic dynamics, with a focus on the features that can be relevant for applications.
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