Reduction of parasitic capacitance of a power inductor through conductor placement
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The emergence of wide-bandgap power devices such as silicon carbide (SiC) MOSFETs can achieve much faster switching speeds, hence lower switching loss, than conventional silicon (Si) IGBTs. However, the faster switching speed, hence higher dv/dt can cause increased turn-on current overshoot, ringing and EMI due to the parasitic capacitance in the system. In this paper, the parasitic capacitance of a filter inductor has been analysed, where a single-layer power inductor with an EE core and rectangular conductors is used to study the factors which affect the parasitic capacitance. Methods to reduce the parasitic capacitance are proposed and analysed with the parasitic capacitance function obtained. The relationship between the parasitic capacitance and design variables such as winding pitch, thickness and dielectric constant of the insulation layer, turn-to-core distance and potting material are studied. The influence factors which can reduce the parasitic capacitance are analysed both by theoretical calculation and Finite Element Analysis (FEA). Three practical methods for reducing the parasitic capacitance are studied based on theoretical formulas. The values of the influence factors and the corresponding minimum of the parasitic capacitance are obtained by the parasitic capacitance function. The results are verified by experiment.Keywords:
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In the past circuit to reach output signal accuracy, usually increase many element reduce the disadvantage in circuit original. This result cause the circuit become complex. The major problem of non-accuracy output signal is parasitic effect, it means that integrated circuit (IC) have parasitic capacitance and leak current in wire to wire. This thesis research is how to reduce parasitic effect to lowest. There are active element, capacitance and inductance in present integrated circuit, although inductance in integrated has be researched, but its speed can not approach reduction in IC process. Today is how to reduce the parasitic effect of resistance, capacitance and active element. If active element have two input, but the design circuit only need one input, it have no need for two input element. Chose small active element can reduce parasitic effect. If resistance floating, two terminal have parasitic effect, ground resistance have parasitic effect in one terminal, capacitance are the same. Chose ground capacitance and ground resistance with parasitic capacitance and parasitic resistance in the same terminal can reduce parasitic effect. It have parasitic effect in circuit terminal, so design in a few terminal can get low parasitic effect. According to above, using a few element to achieve output signal accurate is the goal in this thesis. In recent of years, using current conveyor design active filters have been attended and researched by international academician. In this is, design three input and one output universal active current-mode filter using second-generation current controlled conveyor (CCCII). This active element internal resistance, denoted by Rx, at the input terminal X can be varied by tuning its bias current. It can reduce area in integrated circuit implementation. In three input and one output, we propose a single second-generation current controlled conveyor (CCCII), two grounded capacitors, and one resistor design current-mode universal biquadratic filter in this paper. This circuit has achieved the five following important advantages: (i) no component matching conditions, (ii) using least capacitance and resistance in biquadratic circuit, (iii) grounded capacitors have lowest noise, (iv)can realize on low-pass, band-pass, high-pass, band-reject, and all-pass filters in the same structure, (v) very low active and passive element sensitivity, (vi) orthogonal control of and Q, (vii) lowest power consumption, (viii) lowest noise, (ix) lowest area in integrated circuit implementation, (x) have good cost down. Finally, the simulation results validate and the theory predictions of the proposed circuit are verified very well by using TSMC035 H-spice simulation with supply voltage ±1.65V.
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In this paper, we discuss evaluation results on parasitic effects in RC polyphase filters, where those parasitics appear in LSI implementation. Parasitic capacitance is well known as typical parasitic element, and it degrades circuit performance. We verify performance of an RC polyphase filter with parasitic capacitance in aspects of filter response and Packet Error Rate(PER). We also discuss filter performance degradation due to parasitic resistors connected in series with capacitors and its layout result in 90 nm process.
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Parasitics must be reduced for mm-wave MODFETs to realize their high potential. The parasitic resistances must be reduced so that (1) parasitic charging time is negligible, (2) to maintain the fj/fmax ratio, and (3) noise figure and power performance are not degraded significantly. The parasitic resistance must be scaled as l/fj. The problem of backside via inductance dominating the effective input resistance of wide MODFETs is shown. The design compromises are discussed, and rules-of-thumb are presented for scaling parasitics, (e.g., T-gate size).
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In this paper, simple and analytical models are proposed for a experimental trigate FinFET device which provides a detailed understanding of the inbuilt parasitic resistance and capacitance of the device. The non planar device structures in nano scale regime usually experiences high parasitic resistances and capacitances due to having multiple gates, narrow fin width and narrow source/drain region width as well. A surface potential based charge model is also developed to determine parasitic capacitances. Our proposed model shows good agreement with 3D TCAD Sentaurus device simulation result. The model estimates a limit to scaling of parasitic source/drain resistance and also reveals that contact resistance dominates parasitic resistance of trigate FinFET device.
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Parasitic capacitance was a important parameter of multilayer chip ceramic inductor,and had a great effect upon Q factor and self-resonant frequency of inductor.On design stage,it was difficult to estimate the parasitic capacitance.3D electrostatic finite element model for multilayer chip ceramic inductor was built by Ansoft Q3D software,and stray capacitance among every electrode was calculated.Then,equivalent network of capacitance was obtained.Parasitic capacitance was obtained using the node-voltage equation and the matrix calculation.The calculated result is consistent with the measured one.Influencing factors of parasitic capacitance for multilayer chip ceramic inductor,are ceramic permittivity,width of inside electrodes,thickness of thin-film,width of terminal and vertical electrodes,et al.
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We propose a path for extending the technology roadmap when currently considered technology boosters (e.g., strain, high-k/metal gate) reach their limits. By carefully engineering the device parasitic resistance and parasitic capacitance, and considering the impact of the interconnect wiring capacitance, we propose scenarios of device footprint and device structure scaling that will enable technology scaling for several generations beyond the currently perceived limits.
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The role of the parasitic capacitance of the inductor in boost converters with normally-on SiC JFETs
In this paper the impact of the parasitic capacitance of the inductor on the performance of a fast-switching boost converters with SiC JFETs is discussed. Two inductor designs, one conventional and another with a space between the winding layers, are investigated and their parasitic capacitances are measured by different methods. The air-gap between the winding layers reduced the inductor self-capacitance more than 8 times. The two inductors were used in a 2 kW, 100 kHz boost converter with a normally-on SiC JFET and their performance was compared. When the inductor with a low self-capacitance was used, there were fewer oscillations during the switching transients and the losses were reduced about 16 %.
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The Complementary FET (CFET) is known to be a potential device to continue the feature size scaling. However, studies forecast that increased parasitic RC neutralizes the area reduction advantage that CFETs can provide. In this paper, (1) we report that RC increase by CFETs is not that significant (only +4.25% compared to 5 track FinFET INV), and (2) propose a design methodology that optimizes the parasitics of CFET standard cells to make this happen. Our methodology shows improvements in parasitics by up to 8.15% for capacitance and 32.73% for resistance when comparing the two types of CFET structures.
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This article proposes a general physics-based model for identifying the parasitic capacitance in medium-voltage (MV) filter inductors, which can provide analytical calculations without using empirical equations and is not restricted by the geometrical structures of inductors. The elementary capacitances of the MV inductor are identified, then the equivalent capacitances between the two terminals of the inductor are derived under different voltage potential on the core. Further, a three-terminal equivalent circuit, instead of the conventional two-terminal equivalent circuit, is proposed by using the derived capacitances. Thus, the parasitic equivalent capacitance between the terminals and the core are explicitly quantified. Experimental measurements for parasitic capacitances show a good agreement with the theoretical calculations.
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