Growth of carbon and nitrogen containing precipitates in crystalline solar silicon and their influence on solar cells
14
Citation
65
Reference
10
Related Paper
Citation Trend
Abstract:
magnified image The growth mechanisms, structural, mechanical, and electrical properties of silicon carbide and silicon nitride precipitates in solar silicon are reviewed and some new aspects about the distribution of trace elements in these precipitates are reported in this review. SiC and Si 3 N 4 precipitates may have detrimental impact on the quality of solar silicon material. Therefore intensive research has been done at these precipitates in the past, which is summarized first. The properties of the different types of precipitates reported in literature are then described in detail. Especially SiC precipitates may have detrimental impact on the electrical behavior of solar cells by causing severe ohmic shunting. Furthermore SiC precipitates are very hard and may harm the wafering process. An outlook of the impact of such precipitates on new cell concepts and new solar silicon materials, such as n‐type, is given.Keywords:
Carbon fibers
Summary form only given. Silicon Carbide (SiC) devices have the potential to reduce energy losses in high power applications. However SiC devices have yet to achieve ideal performance levels. The SiC diodes and MOSFETs with advanced trench structures succeeded in improving performance by reduction of the internal electric field. In addition, transfer mold type power modules using SiC devices demonstrated high temperature operation and high power density.
Wide-bandgap semiconductor
Power density
Power MOSFET
Cite
Citations (2)
Cite
Citations (0)
Abstract In the last decades Silicon Carbide (SiC) received special attentions, in particular as semiconductor material, because is considered as alternative to Silicon for the future high-power, low consumption, radiation-hard microelectronics devices. This ambitious goal is particularly interesting also for the physics of the detectors. In this work are discussed some of the recent results obtained by SiCILIA collaboration, a joint research activity between INFN and IMM institutions to increase the level of technological development in the field of SiC detectors.
Microelectronics
Semiconductor detector
Particle detector
Cite
Citations (7)
Hybrid silicon laser
Cite
Citations (0)
Silicon Carbide (SiC) power MOSFETs become more important in 10kV industrial application level, beginning to replace the silicon devices. Due to the harsh environments, high temperature performances of 10kV SiC MOSFETs must be concerned and understood. In this paper, comprehensive static and dynamic parameters of 10kV SiC MOSFETs have been measured up to 225°C. The device physics behind high temperature behaviors has been analyzed by using the basic analytical models.
Power MOSFET
Cite
Citations (3)
Power MOSFET
Blocking (statistics)
Cite
Citations (10)
High temperature capability of silicon carbide (SiC) power MOSFETs is becoming more important as power electronics faces wider applications in harsh environments. In this paper, comprehensive static and dynamic parameters of 1.2 kV SiC MOSFETs have been measured up to 250°C. The electrical behaviors with the temperature have been analyzed using the basic device physics and analytical models.
Power Electronics
Power MOSFET
Cite
Citations (16)
A relationship between the basic properties of semiconductor materials and the performance of unipolar power devices was first published in 1982 [1]. This theory produced the Baliga's Figure-of-Merit (BFOM) which allows determination of which semiconductors can be used to reduce the specific on-resistance in power devices. Accurate measurements of the impact ionization coefficients for SiC [2] determined a BFOM to more than 1000 for 4H-SiC. This encouraged the development of practical SiC devices during the 1990s culminating in the announcement of commercial devices by 2003. Today, high voltage JBS rectifiers and power MOSFETs have become commercially available from multiple sources. This paper reviews the history of development of SiC power devices, their potential applications, and the social impact.
Wide-bandgap semiconductor
Power MOSFET
Figure of Merit
High Voltage
Cite
Citations (18)
Silicon Carbide (SiC), Gallium Nitride (GaN) and Diamond are wide-bandgap semiconductors which also possess extraordinary chemical, electrical and optical properties that make them uniquely attractive for the fabrication of high-power and high-frequency electronic devices, as well as of light-emitters and sensors which have to survive harsh operating conditions.This collection closely reflects the latest experimental and theoretical advances made in this field; divided into the sub-sections: SiC Bulk Growth, SiC Epitaxy, SiC Characterization and Theory, SiC Processing, SiC Devices and Nitrides and Related Materials.The impressive progress reported here will serve as a source of stimulating ideas for anyone working with these materials.
Wide-bandgap semiconductor
Characterization
Cite
Citations (0)
The aim of the present paper is to give the state of the an of the silicon carbide technology by « photographing » it beside the unique technology used for power electronics that is the silicon one.The theoretical superiority of SiC physical properties on those of Si, together with the important technological advancements realized during the last decade, are the main reasons of the interestgiven to SiC nowadays.Conceming electrical performance, the voltage and power handling capabilities do not reach today the high expected values, and remain lower than those provided by Si.On the other hand, SiC components confirm the aptitude of this material for high temperature and high frequency applications.
Power Electronics
High Voltage
Cite
Citations (18)