Electrical Performances and Physics Based Analysis of 10kV SiC Power MOSFETs at High Temperatures
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Silicon Carbide (SiC) power MOSFETs become more important in 10kV industrial application level, beginning to replace the silicon devices. Due to the harsh environments, high temperature performances of 10kV SiC MOSFETs must be concerned and understood. In this paper, comprehensive static and dynamic parameters of 10kV SiC MOSFETs have been measured up to 225°C. The device physics behind high temperature behaviors has been analyzed by using the basic analytical models.Keywords:
Power MOSFET
Power MOSFET(metal oxide silicon field effect transistor) operate voltage-driven devices, design to control the large power switching device for power supply, converter, motor control, etc. But on-resistance characteristics depending on the increasing breakdown voltage spikes is a problem. So 600 V planar power MOSFET compare to 1/3 low on-resistance characteristics of super junction MOSFET structure. In this paper design to 600 V planar MOSFET and super junction MOSFET, then improvement of comparative analysis breakdown voltage and resistance characteristics. As a result, super junction MOSFET improve on about 40% on-state voltage drop performance than planar MOSFET.
Power MOSFET
Voltage drop
Short-channel effect
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SiC MOSFET is the latest high-voltage power device and are characterized by low on-resistance and extremely fast switching speed. The effects of the power MOSFET on power losses of switching power supply were analyzed, the comparison test of SiC MOSFET and silicon MOSFET with same parameter of 1 200 V/24 A was made. The experimental results show that the switching speed of SiC MOSFET is significantly faster than that of silicon MOSFET under the same condition of driver and load,,meanwhile, the power losses are significantly lowerd, the efficiency of switching power supply could be substantially improved and even simply replace SiC MOSFET with silicon MOSFET.
Power MOSFET
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A novel power device concept, the 3-dimensional RESURF double-gate MOSFET (3D RESURF MOSFET), is reported. The structure is based on an extension of the RESURF concept to the third dimension. From numerical simulations and analytical modelling, the 3D RESURF MOSFET is found to offer superior breakdown capability compared to previously reported lateral power devices and challenges state-of-the art vertical devices such as the VDMOSFET.
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Power MOSFET
Short-channel effect
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Although the new CoolMOS concept for high-voltage MOSFET is based on the conventional MOSFET principle, it is not a gradual enhancement or further optimization of the conventional power MOSFET, but a ground-breaking innovation in the MOS-controlled power transistor technology field. Due to its low on-resistance accompanying the high blocking voltage, the previously known technology limits for the standard MOSFET have been far exceeded. This opens the way to new fields of application.
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Blocking (statistics)
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Abstract The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) has developed quickly and become one of the most important devices for a wide range of applications. There is an increasing need for power MOSFET devices with low power consumption and high energy efficiency. Silicon (Si) and Silicon Carbide (SiC) are two kinds of materials used in power MOSFET devices, which have their own advantages of performance for each use. This paper makes a comparison of the on-resistance and high-temperature performance between Si and SiC MOSFETs. The analysis of the differences between the two will mainly come out from the perspective of material properties, and the conclusion of what is the ideal material for power MOSFET devices will be finally drawn.
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A new type of power MOSFET called super junction MOSFET has been introduced. This new power MOSFET presents an interesting behavior in terms of a R/sub DS(on)/ reduction for the same silicon area allowing fabrication of high voltage devices. Additionally, a reduction in the parasitic capacitances, improving the commutation characteristics, have been observed. Thus, this new power MOSFET could replace the traditional device in different power converter applications like power supplies (SMPS) or power factor correction applications. The objective of this paper is to explore the switching characteristics and to present a comparison of this new device SJ-MOSFET with the conventional power MOSFET under different operating conditions using special test circuits.
Power MOSFET
Commutation
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Power MOSFET(metal oxide silicon field effect transistor) operate voltage-driven devices, design to control the large power switching device for power supply, converter, motor control, etc. But on-resistance characteristics depending on the increasing breakdown voltage spikes is a problem. So 600 V planar power MOSFET compare to 1/3 low on-resistance characteristics of super junction MOSFET structure. In this paper design to 600 V planar MOSFET and super junction MOSFET, then improvement of comparative analysis breakdown voltage and resistance characteristics. As a result, super junction MOSFET improve on about 40% on-state voltage drop performance than planar MOSFET.
Power MOSFET
Voltage drop
Short-channel effect
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Static C-V and I-V characteristics related dynamic behaviors of power MOSFET. Models for Si power MOSFET have already been obtained through the previous studies. Based on the model, a model for SiC power MOSFET is proposed that includes the physics of semiconductor, physical structures of the device, and extracted parameters from the measured C-V characteristics. The static I-V characteristics are also discussed with the C-V characteristics. It is clearly shown that the simulated results in switching behavior of the proposed model coincide with experimental results suitably in some conditions.
Power MOSFET
Semiconductor device modeling
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As an important component of power converter, the maturity of power switching devices determines the development of power electronic devices. At present, the commonly used power switching devices such as MOSFET and IGBT are based on silicon semiconductor. Because of the insurmountable shortcomings of cinnamon materials, their development has been greatly restricted. Compared with traditional power devices based on silicon semiconductor materials, SIC MOSFET is one of the ideal devices to replace silicon MOSFET because of its low on-off voltage, fast switching speed and low driving capability. In this paper, a driving circuit based on SIC MOSFET is designed, and its power loss characteristics are tested and compared with those of silicon-based MOSFET with the same power level. The results show that the power loss of the driver, especially the on-state loss of the device, can be greatly reduced by using SIC MOSFET. Compared with the driver using silicon-based MOSFET, the loss of the driver using silicon carbide power device can be reduced by more than 64%. The results show that the control driver based on si-cmofet has lower power consumption and higher efficiency. In the future, SIC MOSFET will be widely used.
Insulated-gate bipolar transistor
Power MOSFET
Gate driver
Switching time
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