Recent Advances in Metal-Organic Chemical Vapor Deposition
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This chapter contains sections titled: Introduction Metal Oxide Film Deposition The Precursor Concept in CVD Metal Oxide Coatings Summary References
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ADVERTISEMENT RETURN TO ISSUEPREVArticleNEXTOrganometallic precursors in the growth of epitaxial thin films of III-V semiconductors by metal-organic chemical vapor deposition (MOCVD)P. Zanella, G. Rossetto, N. Brianese, F. Ossola, M. Porchia, and J. O. WilliamsCite this: Chem. Mater. 1991, 3, 2, 225–242Publication Date (Print):March 1, 1991Publication History Published online1 May 2002Published inissue 1 March 1991https://pubs.acs.org/doi/10.1021/cm00014a008https://doi.org/10.1021/cm00014a008research-articleACS PublicationsRequest reuse permissionsArticle Views624Altmetric-Citations65LEARN ABOUT THESE METRICSArticle Views are the COUNTER-compliant sum of full text article downloads since November 2008 (both PDF and HTML) across all institutions and individuals. These metrics are regularly updated to reflect usage leading up to the last few days.Citations are the number of other articles citing this article, calculated by Crossref and updated daily. Find more information about Crossref citation counts.The Altmetric Attention Score is a quantitative measure of the attention that a research article has received online. Clicking on the donut icon will load a page at altmetric.com with additional details about the score and the social media presence for the given article. Find more information on the Altmetric Attention Score and how the score is calculated. Share Add toView InAdd Full Text with ReferenceAdd Description ExportRISCitationCitation and abstractCitation and referencesMore Options Share onFacebookTwitterWechatLinked InRedditEmail Other access optionsGet e-Alertsclose Get e-Alerts
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Review: Thin film epitaxial semiconductor structures of widely varying but controlled compositions and thickness can be prepared using MOCVD. The performance of the method is gauged against molecular beam epitaxy (MBE) and spray pyrolysis, and comment is made on the direction in which this area of research is going, for example, towards the processing of high‐ T c superconductors and ferroelectric oxides.
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