Metal Organic Chemical Vapor Deposition (MOCVD) Perspectives and Prospects
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Review: Thin film epitaxial semiconductor structures of widely varying but controlled compositions and thickness can be prepared using MOCVD. The performance of the method is gauged against molecular beam epitaxy (MBE) and spray pyrolysis, and comment is made on the direction in which this area of research is going, for example, towards the processing of high‐ T c superconductors and ferroelectric oxides.Keywords:
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Rare-earth ion Yb is doped into InP at concentrations ranging from 1×1015 to 3×1018 cm−3 by metalorganic chemical vapor deposition (MOCVD) using Yb(C5H5)3. Uniform depth profiles revealed by secondary ion mass spectroscopy indicate that controlled rare-earth doping can be achieved by MOCVD. The grown layers show distinct photoluminescence (PL) spectra at 1.2 eV originating from intra-4f-shell transitions in Yb as well as near-band-edge emissions at 1.4 eV. In contrast to Yb-ion-implanted InP [H. Ennen, J. Schneider, G. Pomrenke, and A. Axman, Appl. Phys. Lett. 43, 943(1983)], PL spectra of MOCVD-grown layers below 30 K suggest the absence of Yb ions associated with other impurities or defects. This shows that MOCVD-grown Yb-doped InP is of higher quality than the Yb-ion-implanted InP.
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A status report is given on the metalorganic chemical vapor deposition (MOCVD) of high-temperature superconducting thin films. The advantages of MOCVD processing manifest themselves in the quality of the films produced, and in the economy of the process. Metalorganic precursor requirements, deposition parameters and film properties are discussed. Also difficulties have been identified in making MOCVD a manufacturing technology. To solve these problems, future research directions are proposed.
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Two metalorganic sources, tertiarybutylphosphine (TBP) and tertiarybutylarsipe (TBA), have been investigated for their possible use as precursors in the metalorganic chemical vapor deposition (MOCVD) process. The optical properties of epilayers were characterized by photoreflectance (PR) spectra. The V/III ratios were varied at a growth temperature of 600° C and growth pressure of 150 Torr. The broadening parameter Γ of GaAs at 300 K PR was 11.35 meV. The room-temperature Γ value of InP PR measurement was about 11.46 meV.
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상온 혹은 고온 스퍼터링, CVD, MOCVD(metal-organic chemical vapor deposition)등 ZrO2 박막을 제조하는 여러 증착 방법들이 존재하나 특히 CVD법은 폭 넓고 다양한 공정 가능성과 조건 그리고 정밀한 공정 제어로 인해 각광 받아 왔다. 더욱이 MOCVD법은 낮은 온도에서도 양질의 박막을 증착 가능하게 해준다. 그리하여 MOCVD법은 박막 증착에 있어 가장 최적화된 방법으로 인정받고 있다. 본 연구에서는 이보다 한단계 더나가 ZTB 전구체를 이용하여 Si substrate에 ZrO2 단성분계 산화재료를 RTMOCVD (rapid thermal metalorganic chemical vapor deposition) 방법으로 구성하고, 후속 열처리를 통해서 제조된 물질의 결정화로 단일상 물질을 형성하여 다양한 두께의 박막형성을 유도하고 각두께에 따른 열처리 후의 단일상 박막의 결정성, 물성 변화 및 표면 roughness 등에 미치는 영향 SEM, TEM, XRD등의 분석기기들을 이용하여 분석 연구하였다.
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GaSb and GaInAsSb Photodetectors for λ ≫ 1.55 μm Prepared by Metal Organic Chemical Vapor Deposition
p and n GaSb layers have been grown on GaSb and semi-insulating GaAs substrates by Metal Organic Chemical Vapor Deposition (MOCVD) method ; the lowest doping levels obtained are: p = 2 × 1016cm-3, n = 8 × 1015cm-3. P type Ga 1-x in x As y Sb 1-y layers have also been fabricated by MOCVD with a composition insuring the photodetection at a wavelength of 2.5μm. The properties of the layers and of the as grown junctions are described.
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In this theoretical and experimental research paper, the study of ion implantation into GaN is studied.The GaN structure is studied and the GaN thin film is made on sapphire (silicon carbide) substrate through metal organic chemical vapor deposition (MOCVD) process.The ion implantation technique is also studied well in this paper, the damages, dislocations and defects produced due to ion implantation, the microstructure analysis of GaN crystal is discussed and application of ion implantation is also given here.
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Abstract We report the first example of a Ni0 precursor that provides a contamination-free (<1%) nickel film by metal–organic chemical vapor deposition (MOCVD) using N2 as the carrier gas. The structure and physical properties of the Ni0 precursor and subsequent film are described.
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A status report is given on the metalorganic chemical vapor deposition (MOCVD) of high-temperature superconducting thin films. The advantages of MOCVD processing manifest themselves in the quality of the films produced, and in the economy of the process. Metalorganic precursor requirements, deposition parameters and film properties are discussed. Also difficulties have been identified in making MOCVD a manufacturing technology. To solve these problems, future research directions are proposed.
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