Defect Structure and Properties by Junction Spectroscopy
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Deep-level transient spectroscopy
Deep Level Transient Spectroscopy (DLTS) is a technique to determine the electrical characteristics of an electrically active defect in a semiconductor. A measurement system is developed to detect defects in a semiconductor in a LabView environment. A more accurate method namely Fundamental Frequency Deep Level Transient Spectroscopy (FFDLTS) is proposed as one of the methods to analyze the defect level depth.
Deep-level transient spectroscopy
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The equivalent capacitance formula of capacifelector (driven shield capacitance sensor ) is given by the mutual capacitance and the self capacitance of electrodes in the thesis. Comparing two cases of the capacifelector and the capacitance sensor without shield electrode, the result is found that the equivalent capacitance of capacifelector is less more than the one the capacitance sensor without shield electrode, and verified by experiment.
Differential capacitance
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A donorlike deep level defect in Al0.12Ga0.88N characterized by capacitance transient spectroscopies
Si-doped, n-type heteroepitaxial layers of Al0.12Ga0.88N grown by metalorganic chemical vapor deposition on SiC substrates were characterized by capacitance transient spectroscopies. Conventional deep level transient spectroscopy (DLTS) reveals the presence of a dominant deep level with an activation energy for electron emission to the conduction band of (0.61±0.02) eV. The activation energy of this deep level displays a pronounced field dependence as determined from double-correlation DLTS (DDLTS), which is indicative of a deep donor level in n-type semiconductors. A deep level is observed by optical-DLTS (O-DLTS) with a threshold energy for electron photoemission to the conduction band of 0.77 eV, which appears to be of identical origin as the dominant deep level detected by DLTS. Two additional deep levels are detected with O-DLTS in the upper half of the band gap of our Al0.12Ga0.88N sample with threshold energies of 0.83 and 1.01 eV.
Deep-level transient spectroscopy
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The deep-level transient spectroscopy (DLTS) system is fabricated using low-frequency capacitance measurements and is applied to GaN thin layers to characterize electron traps. The frequency dependence of the capacitance gives the capacitance measurement frequency of 10 kHz in DLTS for the Schottky diodes fabricated on 1-/spl mu/m-thick Si-doped GaN layers due to the high series resistance. DLTS using W-kHz capacitance measurements reveals three electron traps with the energy levels of E/sub c/ - 0.23, E/sub c/ - 0.31 and E/sub c/ -0.61 eV in addition to the broader signals in the temperature range from 350 to 500 K. The concentrations of these traps are found to be in the range of 10/sup 14/ cm/sup -3/.
Deep-level transient spectroscopy
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Photo-deep level transient spectroscopy (photo-DLTS), a new technique to study deep levels in high-resistivity semiconductors, is described, and results of experiments on electron-irradiated n-type silicon are presented. In addition to the usual parameters, such as thermal activation energy and capture cross section, the photoionization energy for some defects was also measured. Thus optical and thermal parameters are measured for the same defects in the same sample. This technique should be useful for studying deep levels in materials made semi-insulating by the introduction of deep levels as compensating centers.
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Electrically active defects in n-type 6H-SiC diode structures have been studied by deep level transient spectroscopy (DLTS) and high-resolution Laplace DLTS. It is shown that the commonly observed broadened DLTS peak previously ascribed to two traps referenced as E1/E2 has three components with activation energies for electron emission of 0.39, 0.43, and 0.44 eV. Further, defects associated with these emission signals have similar electronic structure, each possessing two energy levels with negative-U ordering in the upper half of the 6H-SiC gap. It is argued that the defects are related to a carbon vacancy at three non-equivalent lattice sites in 6H-SiC.
Deep-level transient spectroscopy
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Wide-bandgap semiconductor
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The definition of capacitance in ASTM D150-81 is improved by considering the definition of complex capacitance. It is concluded that since the practical capacitor always has losses, it can be suitably represented by complex capacitance. The complex capacitance is closely related to relative complex permittivity, so that the concept of complex capacitance is very important in technology, and an accurate definition of complex capacitance is necessary for electrical engineering.< >
Electrical capacitance tomography
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Capacitance probe
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Parasitic capacitance
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The basic principle of Deep-Level Transient Spectroscopy(DLTS) was introduced,and numerical calculation of a DLTS spectrum was carried out for n-doped samples.The simulation method of DLTS signal was described for the electron traps having a single deep level center in the p+n junction of 6H-SiC by Labview.From the result of the simulation for the deep level,the impacts of the parameters on the shapes of DLTS signals were demonstrated.The temperature and the half width of the DLTS peak depend systematically on all the parameters,while the height of the peak depends only on the value of rate window.
Deep-level transient spectroscopy
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The domain configuration in the cub-oriented crystal of relaxor-ferroelectric PMN-PT was investigated with a polarizing microscope.The results indicated that under the positive DC electric field,the small ribbon-like domains paralleling to the electric field disappeared gradually when the intensity of electric field exceeded 2.45 kV/cm,and the new domains perpendicular to the electric field emerged near the electrode when the intensity of electric field rose to 7.15 kV/cm.Under the negative DC electric field,the ribbon-like domains grew along the electric field when the intensity of electric field exceeded 2.05 kV/cm.When the intensity of electric field reached 7.15 kV/cm,the domains paralleling to the electric field disappeared gradually and the new domains perpendicular to the electric field emerged.Under AC electric field,domains were vibrating with the frequency less than 50 Hz.
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