E 1/E2 traps in 6H-SiC studied with Laplace deep level transient spectroscopy
A. KoizumiВ. П. МаркевичNaoya IwamotoS. SasakiTakeshi OhshimaKazutoshi KojimaTsunenobu KimotoKazuo UchidaShinji NozakiB. HamiltonА. R. Peaker
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Abstract:
Electrically active defects in n-type 6H-SiC diode structures have been studied by deep level transient spectroscopy (DLTS) and high-resolution Laplace DLTS. It is shown that the commonly observed broadened DLTS peak previously ascribed to two traps referenced as E1/E2 has three components with activation energies for electron emission of 0.39, 0.43, and 0.44 eV. Further, defects associated with these emission signals have similar electronic structure, each possessing two energy levels with negative-U ordering in the upper half of the 6H-SiC gap. It is argued that the defects are related to a carbon vacancy at three non-equivalent lattice sites in 6H-SiC.Keywords:
Deep-level transient spectroscopy
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Deep Level Transient Spectroscopy (DLTS) is a technique to determine the electrical characteristics of an electrically active defect in a semiconductor. A measurement system is developed to detect defects in a semiconductor in a LabView environment. A more accurate method namely Fundamental Frequency Deep Level Transient Spectroscopy (FFDLTS) is proposed as one of the methods to analyze the defect level depth.
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A donorlike deep level defect in Al0.12Ga0.88N characterized by capacitance transient spectroscopies
Si-doped, n-type heteroepitaxial layers of Al0.12Ga0.88N grown by metalorganic chemical vapor deposition on SiC substrates were characterized by capacitance transient spectroscopies. Conventional deep level transient spectroscopy (DLTS) reveals the presence of a dominant deep level with an activation energy for electron emission to the conduction band of (0.61±0.02) eV. The activation energy of this deep level displays a pronounced field dependence as determined from double-correlation DLTS (DDLTS), which is indicative of a deep donor level in n-type semiconductors. A deep level is observed by optical-DLTS (O-DLTS) with a threshold energy for electron photoemission to the conduction band of 0.77 eV, which appears to be of identical origin as the dominant deep level detected by DLTS. Two additional deep levels are detected with O-DLTS in the upper half of the band gap of our Al0.12Ga0.88N sample with threshold energies of 0.83 and 1.01 eV.
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Vacancy clusters in graphite have been investigated using Density Functional T heory (DFT) within B3LYP exchange-functional. The smallest size of vacancy clusters (V4) has been chosen to study the migration energy and aggregation mechanism. Two main types of V4 vacancy clusters have been modeled, the disc (V4d) and the line vacancy clusters; including boat vacancy (V4b) and zig-zag vacancy (V4z). The results show that the presence of unst able V3 vacancy may induce the mono-vacancy to migrate with low energy and vanish through forming stable V4 vacancy cluster. Also, the calculated energy barriers required to form the boat vacancy cluster (V4b), the zig-zag vacancy cluster (V4z) and disk vacancy cluster (V4d) support that the disc and the boat vacancy clusters co-exist. However the zig-zag type might only exist by knocking-out mechanism for highly irradiated graphite.
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AlGaN ∕ GaN ∕ SiC Schottky barrier diodes (SBDs), with and without Si3N4 passivation, have been characterized by temperature-dependent current-voltage and capacitance-voltage measurements, and deep level transient spectroscopy (DLTS). A dominant trap A1, with activation energy of 1.0 eV and apparent capture cross section of 2×10−12cm2, has been observed in both unpassivated and passivated SBDs. Based on the well-known logarithmic dependence of DLTS peak height with filling pulse width for a line-defect related trap, A1, which is commonly observed in thin GaN layers grown by various techniques, is believed to be associated with threading dislocations. At high temperatures, the DLTS signal sometimes becomes negative, likely due to an artificial surface-state effect.
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Photo-deep level transient spectroscopy (photo-DLTS), a new technique to study deep levels in high-resistivity semiconductors, is described, and results of experiments on electron-irradiated n-type silicon are presented. In addition to the usual parameters, such as thermal activation energy and capture cross section, the photoionization energy for some defects was also measured. Thus optical and thermal parameters are measured for the same defects in the same sample. This technique should be useful for studying deep levels in materials made semi-insulating by the introduction of deep levels as compensating centers.
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The use of scanning deep level transient spectroscopy (SDLTS) in the investigation of deep level trap distributions in LEC GaAs is described. Technique is based on electron beam induced current transients in a Schottky barrier, allowing approx. 1 micron spatial resolution. Results indicating enhanced hole trap concentrations around dislocation cores and walls are presented.
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Electrically active defects in n-type 6H-SiC diode structures have been studied by deep level transient spectroscopy (DLTS) and high-resolution Laplace DLTS. It is shown that the commonly observed broadened DLTS peak previously ascribed to two traps referenced as E1/E2 has three components with activation energies for electron emission of 0.39, 0.43, and 0.44 eV. Further, defects associated with these emission signals have similar electronic structure, each possessing two energy levels with negative-U ordering in the upper half of the 6H-SiC gap. It is argued that the defects are related to a carbon vacancy at three non-equivalent lattice sites in 6H-SiC.
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The basic principle of Deep-Level Transient Spectroscopy(DLTS) was introduced,and numerical calculation of a DLTS spectrum was carried out for n-doped samples.The simulation method of DLTS signal was described for the electron traps having a single deep level center in the p+n junction of 6H-SiC by Labview.From the result of the simulation for the deep level,the impacts of the parameters on the shapes of DLTS signals were demonstrated.The temperature and the half width of the DLTS peak depend systematically on all the parameters,while the height of the peak depends only on the value of rate window.
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