The Effect of (Ba,Sr) and (Mn,Fe,W) Dopants on the Microwave Properties of BaxSr1−xTiO3 Thin Films
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We fabricated Fe(Se1−xTex) thin films on LSAT(100), MgO(001), R-Al2O3 substrates by ArF excimer pulsed laser deposition (ArF-PLD) and investigated pulse repetition rate dependence on film growth of Fe(Se1−xTex) thin films in ArF-PLD. Through x-ray diffraction measurements of Fe(Se1−xTex) thin films grown by ArF-PLD, 00l peaks of Fe(Se1−xTex) were confirmed in Fe(Se1−xTex) thin films grown by pulse repetition rate of 10 Hz but the 00l peaks were not confirmed in Fe(Se1−xTex) thin films grown at 5 Hz. Atomic force microscopy (AFM) revealed that 100 ~ 250 nm sized grains were formed on surface of the thin films grown at 10 Hz. It was found that the thin films grown at 5 Hz were formed thinner than those grown at 10 Hz, in spite of the same pulses. Energy dispersive x-ray spectroscopy (EDX) analysis revealed that composition elements of the thin films grown at 5 Hz were re-evaporated from them more than those grown at 10Hz. In ρ-T measurements of the thin films grown at 10 Hz, it was confirmed that the thin films has TConset = 6.5 ~ 10.5 K and TC0 of the Fe(Se1−xTex) thin film on an MgO substrate is 3.9 K.
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Thin films of CaWO4 were synthesized by pulsed laser deposition (PLD) using targets composed of CaO and WO3 oxide mixtures. The crystallinity of CaWO4 thin films strongly depended on PLD conditions, that is, substrate temperature, ambient oxygen pressure, and laser fluence. Congruent thin films with stoichiometry were obtained at 873 K. They showed photoluminescence (PL) at room temperature. PL spectra were characteristic with excitation wavelength, peaked at 440 and 520 nm, which were excited with 340–360 and 300–330 nm, respectively. Cathodeluminescence (CL) spectra could be recorded at room temperature on the PLD thin films and were composed of the same species as observed in PL spectra. Intensity of CL spectra increased drastically after postannealing the PLD thin films at 873 K. PLD experiments were also carried out using CaWO4 targets at the same conditions. Crystalline CaWO4 thin films were obtained much easier than PLD using targets composed of CaO and WO3 oxide mixtures.
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Strontium titanate
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The Ba(Zr0.2Ti0.8)O3 ceramics were prepared using BaCO3,ZrO2 and TiO2 et al as crude materials,Sm2O3 as dopant,and the dielectric properties are investigated.The morphology of the samples was observed by SEM.It was found that the Sm3+ ions tended to enter into the B-site in the perovskit lattice with the amount of the dopants increase when the amount of x(Sm2O3) was less than 0.2% and after the Sm3+ ions entered into the A-site.The amount of Sm2O3-dopant has significantly influence on the dielectric constant and the loss of the sample.When the amount of x(Sm2O3) was 0.2%,the ceramic sample had the maximum dielectric constant of about 5 600.With the amount of Sm2O3-dopant increase,the dielectric loss of the sample has been improved significantly and the minimum loss has decreased to 0.002 1.
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Tin (Sn) and tungsten (W) co-doped vanadium dioxide (VO2) nanostructured thin films with 50-nm thickness were deposited by pulsed laser deposition (PLD) to reduce the transition temperature and improve the IR transmittance. The crystal structure of the nanostructured thin films and the presence of elements were evaluated by XRD and XPS analysis. The transition temperature (T(c)) of 1 at% Sn-1 at% W co-doped VO2 nanostructured thin film was decreased to about 22 degrees C (from 70.3 to 48.5 degrees C) compared with the undoped VO2 nanostructured thin film. The transmittance width in the IR range of the co-doped nanostructured thin film decreased from 37.5% to 27% compared with the undoped VO2 nanostructured thin film. Also, the width of hysteresis was narrowed by Sn doping.
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The data presented in this paper are related to the research article entitled "Pulsed laser deposition of single phase n- and p-type Cu2O thin films with low resistivity" (S.F.U. Farhad et al., 2020) [1]. The detailed processing conditions of copper oxide thin films and a variety of characterization techniques used are described in the same ref. [1] https://doi.org/10.1016/j.matdes.2020.108848. Thin films need to grow on different substrates to elucidate various properties of the individual layer for attaining optimum processing conditions required for devising efficient optoelectronic junctions as well as thin film stacks for different sensing applications. This article describes the effect of substrate temperature and oxygen partial pressure on the structural, morphological, optical, and electrical properties of pulsed laser deposited (PLD) nanocrystalline copper oxide thin films on quartz glass, ITO, NaCl(100), Si(100), ZnO coated FTO substrates. The low temperature grown copper oxide and zinc oxide thin films by PLD were used for devising solid n-ZnO/p-Cu2O junction and investigated their photovoltaic and interface properties using dynamic photo-transient current measurement at zero bias voltage and TEM/EDX respectively. These datasets are made publicly available for enabling extended analyses and as a guide for further research.
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Surface diffusion
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