The negative capacitance effect on the C-V measurement of ultra thin gate dielectrics induced by the stray capacitance of the measurement system
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This paper describes how thin film capacitance measurements below 2 nm are affected by an anomalous "negative capacitance effect" induced by parasitic components that originate from the wafer chuck. This inductive effect is observed even though appropriate calibration is executed at the tips of the probe needle to remove the residual inductance from the measurement system. We explain the mechanism of the "negative capacitance effect" theoretically and demonstrate it experimentally. We also propose a new methodology for on-wafer C-V measurements that can reduce this inductive effect that originates from system parasitics while at the same time expanding the practical frequency range of measurement to 100 MHz.Keywords:
Parasitic capacitance
Parasitic extraction
Differential capacitance
Capacitance probe
In this paper, we discuss evaluation results on parasitic effects in RC polyphase filters, where those parasitics appear in LSI implementation. Parasitic capacitance is well known as typical parasitic element, and it degrades circuit performance. We verify performance of an RC polyphase filter with parasitic capacitance in aspects of filter response and Packet Error Rate(PER). We also discuss filter performance degradation due to parasitic resistors connected in series with capacitors and its layout result in 90 nm process.
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In this paper, we estimate using an analytical model the parasitic capacitances of 3D inverters based on 3D sequential integration. Total capacitance and delay are evaluated for two different contact schemes (plug and bar contact) and compared with a 2D reference.
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In this paper, simple and analytical models are proposed for a experimental trigate FinFET device which provides a detailed understanding of the inbuilt parasitic resistance and capacitance of the device. The non planar device structures in nano scale regime usually experiences high parasitic resistances and capacitances due to having multiple gates, narrow fin width and narrow source/drain region width as well. A surface potential based charge model is also developed to determine parasitic capacitances. Our proposed model shows good agreement with 3D TCAD Sentaurus device simulation result. The model estimates a limit to scaling of parasitic source/drain resistance and also reveals that contact resistance dominates parasitic resistance of trigate FinFET device.
Parasitic extraction
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Parasitic capacitance
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Parasitic extraction
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We improve the accuracy and speed of boundary element method (BEM) or multipole accelerated BEM for interconnect parasitic extraction. Three techniques are presented and applied to capacitance extraction: selective coefficient enhancement, variable order multipole and multigrid. Experimental results show that the techniques are effective for extracting parasitics between all pairs of conductors, or between selected pairs of conductors.
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We improve the accuracy and speed of boundary element method (BEM) or multipole accelerated BEM for interconnect parasitic extraction. Three techniques are presented and applied to capacitance extraction: selective coefficient enhancement, variable order multipole and multigrid. Experimental results show that the techniques are effective for extracting parasitics between all pairs of conductors, or between selected pairs of conductors.
Parasitic extraction
Parasitic capacitance
Multigrid method
Parasitic element
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The Complementary FET (CFET) is known to be a potential device to continue the feature size scaling. However, studies forecast that increased parasitic RC neutralizes the area reduction advantage that CFETs can provide. In this paper, (1) we report that RC increase by CFETs is not that significant (only +4.25% compared to 5 track FinFET INV), and (2) propose a design methodology that optimizes the parasitics of CFET standard cells to make this happen. Our methodology shows improvements in parasitics by up to 8.15% for capacitance and 32.73% for resistance when comparing the two types of CFET structures.
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Parasitics engineering on a GaAs vertical transistor is analyzed. Through separate control of source/drain (S/D) spacer and underlap, the individual impact of the parasitic components is unveiled. Thicker S/D spacer improves fT, fmax by reducing parasitic capacitance. Increased source-side underlap improves output resistance and gain as the virtual source point is shifted. Increased drain-side underlap improves fmax by reducing parasitic capacitance. Optimization of different analog/RF metrics can be easily implemented through asymmetric S/D spacer/underlap design in a vertical transistor.
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Abstract For accurately detecting capacitance changes of the differential‐capacitance transducer, which is widely used in environmental and chemical engineering, a low‐cost interface circuit was developed. The circuit uses a “lock‐in detection” circuit with feedback loop containing a DC amplifier and a modulator to yield such advantages over the others that it reduces the sensitivity to element parameter variations in the “lock‐in detection” circuit, that it decreases the sensitivity to the disturbances within closed‐loop, and that it is immune to parasitic capacitance, resistance, amplitude, and frequency of the excitation voltage source. The circuit has the capability to detect a capacitance change as small as 0.0078% of the total capacitance, up to 80 pF. A capacitance diaphragm pressure transducer and a standard pressure source (Rusca 2465 piston gauge) are connected to the interface to confirm the analysis.
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A novel AD7746-based weak capacitance measurement system with high precision is presented to solve the problem of weak capacitance measurement.The AD7746 chip is 24-bit high resolution capacitance-to-digital converter which is developed by ADI.Its capacitance input range is ±4 pF,while its common-mode capacitance can accept up to 17 pF with two capacitance input channels.The system reduces the parasitic capacitance,suppresses the electromagnetic interference to implement the wide range and high resolution measurement by adopting the double-shielded capacitance and the shielded electric cables.The test results show that the measurement has high measurement accuracy and repeatability,and the worst error of the capacitance output is less than ±1 fF under the condition of the self-fabricate capacitance sensor.
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Differential capacitance
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