Characterization of quality-factor tunable integrated silicon microtoroidal resonators
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Microresonators are basic building blocks for compact photonic integrated circuits (PICs). The performance of the microresonators depends on their intrinsic and loaded quality factors (Q). Here we demonstrate the optical characterization of a single crystalline silicon microtoroidal resonator with integrated MEMS-actuated tunable optical coupler. The device is realized on a two-layer silicon-on-insulator (SOI) structure. It is fabricated by combining hydrogen annealing and wafer bonding processes. The device has been demonstrated to be operated in all three coupling regimes: under-coupling, critical coupling, and over-coupling. At an actuation voltage of 114 V, the extinction ratio at the resonant wavelength of 1548.18 nm reaches 22.4 dB. To characterize these quality-factor tunable microtoroidal resonators, we have also developed a comprehensive model based on time-domain coupling theory. The intrinsic and loaded Qs are extracted by fitting the experimental curves with the model. The intrinsic Q is 110,000. And the loaded Q is continuously tunable from 110,000 to 5,400. This device has potential applications in variable bandwidth filters, reconfigurable add-drop multiplexers, and optical sensors.Keywords:
Extinction ratio
Q factor
Coupled mode theory
In this talk, we review the technical merits of silicon photonic devices and integrated circuits, which have benefited from high-index-contrast silicon waveguides, a high integration level of various optical functions on the same chips, and mature complementary metal-oxide semiconductor (CMOS) fabrication techniques. These technical merits assure silicon photonics as a disruptive optical technology that will achieve low-cost and compact optical modules for data communications, with applications such as chip-scale optical interconnects, short-reach communications in datacenters and supercomputers, and metro/long-haul optical transmissions. In particular, we review silicon photonic circuits for wavelength-division multiplexing (WDM) transmitters, WDM receivers, coherent optical transmitters and coherent receivers, photonic networks-on-chip, and silicon photonic light sources. Article not available.
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Based on coupling mode theory,microring resonant theory and electro-optical modulation theory,we propose an electro-optically tunable microring resonator with two U-bend waveguides.The relationships between output spectrum and the length of U-bend waveguide as well as coupling coefficient are analyzed through simulation.The simulation results show that the 15μm radius microring outputs a relatively large free spectrum range of 56 nm,a 60 dB higher extinction ratio and an extremely narrow bandwidth when the coupling coefficient is locked in a very reasonable range.Besides,the output wavelength and extinction ration can be modulated by the voltages loaded on microring and U-bend waveguide respectively.
Extinction ratio
Coupled mode theory
Free spectral range
Molar absorptivity
Extinction (optical mineralogy)
Waveguide
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In this paper we review our work in the field of III-V/silicon photonic integrated circuits operating in the communication wavelength window. Heterogeneously integrated lasers on silicon waveguide circuits using adhesive and molecular bonding are described.
Hybrid silicon laser
Waveguide
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In this paper we review our work in the field of III-V/silicon photonic integrated circuits operating in the communication wavelength window. Heterogeneously integrated lasers on silicon waveguide circuits using adhesive and molecular bonding are described.
Hybrid silicon laser
Waveguide
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Optical modulator devices in silicon have experienced dramatic improvements over the last decade, with data rates demonstrated up to 50Gb/s and ultra-lower power consumption with a few fJ/bit[1]. However a significant need exist for high speed low power devices with a small footprint and broadband characteristics with extinction ratio above 5dB. Here we describe the work within the UK silicon photonics program, which has led to the fabrication and preliminary results of novel nano cavity optical architecture as well as self-aligned pn junction structures embedded in a silicon rib waveguide with an active length in the millimetre range producing high-speed optical phase modulation whilst retaining a high extinction ratio.
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Modulation (music)
Optical power
Hybrid silicon laser
Waveguide
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We review recent breakthroughs in the silicon photonic technology and components, and describe progress in silicon photonic integrated circuits. Heterogeneous silicon photonics has recently demonstrated performance that significantly outperforms native III/V components. The impact active silicon photonic integrated circuits could have on interconnects, telecommunications, sensors, and silicon electronics is reviewed.
Hybrid silicon laser
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We propose and experimentally demonstrate the enhancement of filtering quality factor (Q) and extinction ratio (ER) of an integrated micro-ring resonator through the use of an integrated Fabry-Perot cavity. Up to 11-times improvement in Q, together with an 8-dB increase in ER, are experimentally achieved.
Extinction ratio
Q factor
Extinction (optical mineralogy)
Optical cavity
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Improved Extinction Ratio of 25 dB was demonstrated in silicon based optical modulators on CMOS platform in China. The measurement results agree with the simulation, followed by a discussion about the effects of both propagation loss in Mach-Zehnder arms and power ratio at beam splitters and combiners. The analyses indicate that many considerations have to be taken into design and development of the compatible fabrication of these integrated silicon photonics, especially for the improved extinction ratio of optical modulators. In this summary, we propose the integrated optical modulators in SOI by use of the compatible CMOS processes under the modern CMOS foundry in Chinese homeland. And the measured results were shown, the fast response modulator with the data transmission rate of 10 Gbps.
Extinction ratio
Beam splitter
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We review our work on the heterogeneous integration of III-V laser sources on the silicon photonics platform. These building blocks enable the realization of fully integrated silicon photonic transceivers for optical interconnect applications.
Realization (probability)
Optical interconnect
Transceiver
Hybrid silicon laser
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In this talk, we review the technical merits of silicon photonic devices and integrated circuits, which have benefited from high-index-contrast silicon waveguides, a high integration level of various optical functions on the same chips, and mature complementary metal-oxide semiconductor (CMOS) fabrication techniques. These technical merits assure silicon photonics as a disruptive optical technology that will achieve low-cost and compact optical modules for data communications, with applications such as chip-scale optical interconnects, short-reach communications in datacenters and supercomputers, and metro/long-haul optical transmissions. In particular, we review silicon photonic circuits for wavelength-division multiplexing (WDM) transmitters, WDM receivers, coherent optical transmitters and coherent receivers, photonic networks-on-chip, and silicon photonic light sources.
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