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    The influence of electron beam evaporation rate on the properties of Ti films was studied at different rates with the same Ti film thickness.SEM photos showed few differences of the surface roughness among the Ti films.But,the resistance test indicated that the square resistance became smaller while the evaporation rate got higher,and it was believed that the thin films became denser while the Ti evaporation rate increased.In DC test of devices,the Schottky barrier heights(SBH)varied in a certain range with different Ti evaporation rates.Hence,improve the SBH could be improved by optimizing the evaporation rate.Therefore,the Ti evaporation rate is one of the key factors of Schottky barrier for GaAs device fabrication.
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    During the vacuum evaporation of materials by electron bombardment, the backscattered electrons frequently cause fine cracks and minute irregularities in the evaporated film.To avoid this problem, the behavior of backscattered electrons has been studied using the resistance network method. Electron beam trajectories and the surface temperatures of the tar get being bombarded have been investigated using a pierce-type electron gun and a high AG accelerating potential.From the results obtained, a new electron beam evaporator has been designed which has many advantageous features.
    Electron gun
    Electron beam processing
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    We report the development of TiO2 films by reactive electron beam evaporation, using a recently introduced Ti3O5 material as the starting material. The processing window to prepare high quality stoichiometric TiO2 was found quite narrow.
    Stoichiometry
    Materials processing
    Citations (1)
    Cd S thin films were prepared by electron beam evaporation(EBE) method with using high pure blocky Cd S on glass substrate. The crystal structure and surface morphology of the films were characterized by X-ray diffraction and atomic force microscopy;the optical and electrical properties of the films were analyzed by four probe resistance tester and ultraviolet visible spectrophotometer. The results showed that the evaporation rate had significant effects on the films structure and properties. The Cd S films prepared at 10?S-1were uniform and dense surface morphology and were presented the strongest peak intensities of the XRD patterns. The photoelectric properties were best. Moreover,the photo sensitiveness reached 7.7×102,the minimum light resistance was 1350Ω/□.
    Photoelectric effect
    Morphology
    Crystal (programming language)
    Ultraviolet
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    Deposition
    Titanium oxide
    Vacuum evaporation
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    A discussion is presented of the limitation of current density by random irregularities of the cathode surface in an electron beam which is focused by a static electromagnetic field. The Langmuir-Pierce law for the maximum attainable current density is profoundly altered by the effects of cathode roughness. It is found that the minimum beam diameter attainable in typical cathode-ray tubes is unaffected by change of cathode temperature or proportional change in the potentials of all electrodes.
    Hot cathode
    Cold cathode
    Langmuir Probe
    Citations (2)