Assessment of the resolution of scanning tunneling microscope with a tip of a boron-doped diamond
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A scanning tunneling microscopy (STM) study of the α-Sn/Ge(111) at low temperature is presented. The scanning tunneling spectroscopy (STS) measurements of the surface evidenced a metallic character from the room temperature down to the 3×3 transition temperature. The fluctuation model for the √3×√3 reconstruction is confirmed by dynamical measurements of the tunneling current on top the Sn adatoms. The STM tip was used as a probe to verify the presence of oscillating Sn adatoms by studying the tunneling current as a function of time.
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To expand the capabilities of the microwave frequency alternating current scanning tunneling microscope to include the ability to study isolated adsorbates and highly reactive surfaces, we have developed a low temperature, ultrahigh vacuum alternating current scanning tunneling microscope. In this alternating current scanning tunneling microscope, we employ the reliable beetle-style sample approach mechanism with a number of other components unique to a low temperature scanning tunneling microscope. These include the sample transfer, delivery, retrieval, storage, sputtering, and heating systems. This alternating current scanning tunneling microscope operates at 77 and 4 K.
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Partially oxidized Si(111) surfaces and surfaces of highly oriented pyrolytic graphite (HOPG) were studied by two different ultrahigh vacuum scanning tunneling microscope (UHV-STM) systems and by an STM system working under ambient conditions, respectively. The STM current images of partially oxidized Si(111) surfaces and HOPG surfaces were analyzed by one/two-dimensional fast Fourier transformation (1D-FFT/2D-FFT). The phenomenon of temporal oscillations of tunneling current on the partially oxidized Si (111) surfaces was detected with both UHV-STM systems. Temporal as well as spatial oscillations of tunneling current appeared in highly resolved STM current images of the Si(111) surfaces simultaneously, but both kinds of oscillations could be discriminated according to their different influence on the 2D-FFT spectra of the current images, while varying the scanning range and rate. On clean HOPG surfaces only spatial oscillations of tunneling current induced by the surface structure were observed.
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Here we describe a straightforward electrochemical method for fabricating sharp cobalt tips. Such tips are particularly useful for those scanning tunneling microscopy (STM) experiments where the focus is on magnetic properties of the surface and the spin polarized (SP) tunneling current is the relevant property, such as in SPSTM and SP scanning tunneling spectroscopy.
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This article reviews the manipulation of single molecules by scanning tunneling microscopes, in particular, vertical manipulation, lateral manipulation, and inelastic electron tunneling manipulation. For a better understanding of these processes, we shortly review imaging by scanning tunneling microscopy as a prerequisite to detect the manipulated species and verify the result of the manipulation and scanning tunneling spectroscopy and inelastic electron tunneling spectroscopy, which is used to chemically identify the molecules before and after the manipulation that employs the tunneling current.
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Scanning Tunneling Microscopy is a recently developed technique within the area of Scanned Image Microscopy that is based on tunneling between two conducting electrodes. This method offers, for the first time, the possibility of direct, real space determination of surface atomic and electronic structure in three dimensions on an atomic length scale, including nonperiodic structures. In this technique a sharp metal tip, mounted on a piezoelectric tripod that forms an orthogonal coordinate system, is brought to within a few Angstroms of the sample surface without “touching” the region to be scanned. A tunneling current I, on the order of 0.1 to 1 nA, is established by applying a bias between the tip and sample. The tunneling current is given to first order by;
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