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    3-μ InGaAsSb/InPSb diode lasers grown by organometallic vapor-phase epitaxy
    Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE (1992)
    R. MennaD. CapewellRamon U. MartinelliP. K. YorkR.E. Enstrom
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    Abstract:
    We have observed laser action in InO7GaO3AsO72SbO28 IInPO.7SbO.3 double heterojunction, diode lasers at ? = 3.06 .tm. The maximum operating temperature was 35 K. The threshold current densities were in the range of 200 - 330 A /cm These devices were grown by organometallic vapor-phase epitaxy.
    Keywords:
    Vapor phase
    Topics:
    Photonic and Optical Devices
    Semiconductor Lasers and Optical Devices
    Spectroscopy and Laser Applications
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    Selective Embedded Growth of AlxGa1-xAs by Low-Pressure Organometallic Vapor Phase Epitaxy
    Japanese Journal of Applied Physics (1986)
    Koichi KamonShigenori TakagishiHideki Mori
    Selective embedded growth of Al x Ga 1- x As ( x ≤0.35) in grooves of patterned substrates has been achieved for the first time by low-pressure organometallic vapor phase epitaxy (LP-OMVPE). Epitaxial Al x Ga 1- x As layers are embedded only in chemically etched grooves, while no polycrystalline deposition occurs on the masked area. The layers grown in grooves with the reverse-mesa cross sections, formed in the [110] direction, are uniform in thickness and show flat-smooth surfaces throughout. These results indicate that LP-OMVPE is a very promising technique for monolithic device integration.
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    Effects of quality of SiO 2 mask on epitaxial lateral overgrowth of GaN by hydride vapor phase epitaxy
    The Japan Society of Applied Physics (2015)
    Shin Goubara
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    The effect of trimethylaluminum concentration on the incorporation of P In AlxGa1−xPyAs1−y grown by organometallic vapor phase epitaxy
    Journal of Electronic Materials (1982)
    M. J. LudowiseW. T. Dietze
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    Vapor phase
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    Growth and X-ray Characterization of an InN Film on Sapphire Prepared by Metalorganic Vapor Phase Epitaxy
    Japanese Journal of Applied Physics (1997)
    Wei‐Kuo ChenYung-Chung PanHeng-Ching LinJehn OuWen-Hsiung Chen Wen-Hsiung Chen
    We report the successful growth of an InN film by metalorganic vapor phase epitaxy. The film quality is found to be strongly dependent on the growth temperature and the TMIn reactant flow rate. The best quality epilayer was obtained at 375°C under a high V/III ratio growth environment. It exhibits a FWHM of the X-ray rocking curve as narrow as 96 arcsec, which explains the superior crystalline quality of our epitaxial film.
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    Generalized simulator for vapor phase epitaxy on patterned substrates
    Journal of Crystal Growth (1995)
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    Thick InGaN growth on several crystal planes of ZnO substrate by metalorganic vapor phase epitaxy
    Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE (2008)
    Y. KawaiShinya OhsukaMotoaki IwayaSatoshi KamiyamaHiroshi Amano
    InGaN epitaxial film growth has been performed on (0001) c-, (1120) a- and (1100) (see manuscript for full text) m-plane ZnO substrates by metalorganic vapor phase epitaxy in the temperature range of 550°C - 680°C. The grown layers were confirmed to be single crystalline by X-ray diffraction.
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    Marian A. HermanW. RichterH. Sitter
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