A 90nm CMOS wide-band voltage-controlled ring oscillator for digital TV-tuner
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Abstract:
A voltage-controlled ring oscillator in 90nm CMOS technology with ultra wide-band and low phase noise for digital TV-tuner is presented. By introducing pre-amplifying transistors to get novel four outputs delay stage, tuning range is greatly widened. Pre-charging transistors with optimized control method decrease phase noise without increasing parasitic capacitances. The oscillator can be operated from 38MHz to 1.38GHz, while worst phase noises are −107dBc/Hz at 1MHz offset and −85dBc/Hz at 100 KHz offset in full frequency range. It maximally consumes 11.1mA with 1.8V supply voltage.Keywords:
Tuner
Ring oscillator
Digitally controlled oscillator
Digitally controlled oscillator
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Voltage Controlled Oscillator plays significant role in communication system design. The design of Voltage Controlled Oscillator (VCO) with low power consumption and high frequency range is presented in this paper. The VCO is based on a single ended CMOS inverter ring oscillator . Accurate frequency of oscillation in Ring Oscillator is an important design issue. A Voltage Controlled Ring Oscillator with wide tuning range from 917.43MHz to 4189.53MHz can be achieved using bulk driven technique by varying the threshold voltage of the MOS circuits. The circuit is designed using 0.13µm CMOS process for a supply voltage of 1V. Simulation results show better accuracy compared to existing current staved ring VCO using different number of inverter stages . Keywords: Bulk driven technique, CMOS Process, Ring Oscillator, Voltage Controlled Ring Oscillator, Inverter.
Ring oscillator
Digitally controlled oscillator
Oscillation (cell signaling)
Pierce oscillator
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본 논문에서는 전원 잡음에 둔감한 발진 주파수를 가지는 CMOS ring oscillator를 설계하였다. 제시한 전원 잡음 보상형 ring oscillator 는 on-chip 으로 내장된 적응형 bias-current 및 voltage-swing 조절 회로를 이용하였다. 설계된 ring oscillator 는 0.13-㎛ 공정을 사용하였고 전원 변화에 대한 민감도는 0.013%-f oscillator /1%-V dd 를 보이고 있다.
Ring oscillator
Digitally controlled oscillator
Pierce oscillator
RC oscillator
Parametric oscillator
Colpitts oscillator
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A new design of a Voltage Controlled Ring Oscillator is proposed in this paper in order to improve the oscillation frequency characteristic. The structure and the operation of proposed Voltage Controlled Ring Oscillator have been described. The new VCO is implemented and simulated by using ADS platform with 0.35μm AMS CMOS technology; this circuit uses relatively small devices dimensions and low power supply 2V to operate in a large range frequency. In addition, the proposed structure enables the output signal of the VCO to oscillates between ''0'' and ''1'' for each input value of control voltage Vinvco, varied between 0V to 1,3V, which is difficult to get from the Conventional Voltage Controlled Oscillator. Input control voltage of VCO, Vinvco, it is the analog voltage generated from the Loop Filter if a Voltage Controlled Oscillator circuit is use in Phase Locked Loops (PLLs) systems.
Digitally controlled oscillator
Ring oscillator
Oscillation (cell signaling)
Pierce oscillator
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Abstract Ring oscillator is a device which consists of NOT gates connected in the form of ring. This ring oscillator’s output oscillates between the true and false stages controlled by applied voltage. Now days this voltage controlled oscillator (VCO) becomes the heart of modern electronic devices and communication systems. Earlier five-stage complementary metal oxide semiconductor (CMOS) based VCO for the Phase Locked Loop (PLL) was implemented. High frequency oscillations are required for many applications and further it is observed that a very general technique is normally adopted by researchers to achieve high frequency that if number of transistors is increased then the frequency can be increased. But the consequences of increase in number of transistors are the increase in delay and more number of MOSFET occupies more area and more power dissipation. So, in this paper VCO is designed with efficient utilization of MOSFETs. There is a balance between frequency and number of transistors, so that the area and power dissipation can be reduced. From the obtained results it can observed that the number of MOSFET’s, Independent Nodes, boundary nodes total nodes and power are reduced compared to five stage VCO and VCO based Ring oscillator.
Ring oscillator
Digitally controlled oscillator
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In the millimeter wave wireless communication system, frequency source is an indispensable device in the communication equipment. It is designed to provide a local oscillator signal for the receiving and transmitting system. Its tuning range, phase noise and frequency stability are very important to the quality of the whole communication link. For this purpose, this paper studies the low power millimeter wave voltage controlled oscillator based on CMOS technology, and designs a Q band voltage controlled oscillator used for Q- LINKPAN standard. Firstly, this paper designs the voltage controlled oscillator (VCO) circuit structure, the voltage controlled oscillator circuit, cross coupled pair, on-chip inductor and variable capacitance tube, and studies the connection layout method to reduce the layout parasitic, summarizes the method of imitation of the VCO after using the electromagnetic simulation software HFSS, accumulates certain design experience for the circuit design, layout design and post simulation of millimeter wave VCO, and gives the simulation results for Q band voltage controlled oscillator used for Q-LINKPAN standard. The simulation results show that the designed voltage controlled oscillator has low power consumption and high performance, showing the correctness of the design.
Digitally controlled oscillator
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The communication system has become an integral part of human life. The most important block of communication system is oscillator. This paper focused on implementation of different types of oscillator (Ring oscillator, LC oscillator & Voltage control oscillator) for ISM & Wi-Fi band applications using 90nm, 65nm & 45nm technologies using microwind 3.5 software. For ring oscillator developed using 65nm & 45nm saves the area up to 40% & 80% as compared to ring oscillator developed with 90nm technology but for this we have to inject parasitic to get the desired frequency band. For LC oscillator desired band of frequency can be achieved by compromising large area as we need to develop inductor on chip. To overcome this problem the voltage control oscillator (VCO) is designed. The VCO gives desired band of frequency just by changing external DC Voltage, so it is more susceptible to advanced in technology.
Ring oscillator
Digitally controlled oscillator
Pierce oscillator
Frequency band
ISM band
Colpitts oscillator
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A new four stage differential ring voltage-controlled oscillator (VCO) is introduced in this paper for wide tuning-range applications of phase-locked loops (PLLs). A differential delay cell equipped with a CMOS inverter-based frequency tuning mechanism is proposed to widen the tuning frequency range of the ring oscillator. 90nm CMOS technology(GPDK90) is utilized to simulate the proposed oscillator. The supply voltage selected for this design is 1.0V. The built-in oscillator achieves a tuning frequency range of 2.07 GHz to 7.56 GHz, and this range is obtained by increasing the control voltage from 0.0V to 0.5V. The proposed oscillator can produce 526µW of power at its maximum. The mentioned oscillator attained a power efficiency value of 0.06mW/GHz. At 1 MHz offset, the proposed oscillator exhibits -86.28dBc/Hz phase noise, and the obtained value of Figure of Merit (FOM) is -166.64 dBc/Hz.
Ring oscillator
dBc
Digitally controlled oscillator
Figure of Merit
Colpitts oscillator
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A Digitally controlled oscillator (DCO) designed with digital programming using binary coded capacitor load is presented. The Digitally Controlled Oscillator is basically designed based on the ring oscillator, where delay of the ring oscillator is controlled digitally. The delay cell is implemented to synthesize digital input. The oscillation frequency is controlled digitally with control bits applied to the input of binary coded capacitive load. The nine-bit DCO implemented using the 45nm technology at 1 V supply voltage shows oscillation frequency variation in the range of 1.2486-1.2523 GHz, with a change in control bits. The design implementation has better stability against supply voltage variation compared to the conventional voltage controlled oscillator (VCO).
Digitally controlled oscillator
Ring oscillator
Oscillation (cell signaling)
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An eight-phase digitally controlled ring oscillator that employs a multipoint-tuning technique is presented. The DCO fine-tuning is realized by multi-variable RC loads to improve frequency resolution and coupled-noise rejection by reducing DCO gain. With a set of rotating control logic circuits and eight DACs, the DCO achieves a minimum frequency quantization step of 55 kHz and noise sensitivity of 22 MHz/V. Implemented in a 0.13-μm CMOS process with a 1.2-V supply, the proposed ring-DCO is tuned by 24-bit frequency control word and operates from 1.76 to 3.74 GHz.
Ring oscillator
Digitally controlled oscillator
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