A noise-insensitive high-resolution digitally controlled ring oscillator with multipoint-tuning technique
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An eight-phase digitally controlled ring oscillator that employs a multipoint-tuning technique is presented. The DCO fine-tuning is realized by multi-variable RC loads to improve frequency resolution and coupled-noise rejection by reducing DCO gain. With a set of rotating control logic circuits and eight DACs, the DCO achieves a minimum frequency quantization step of 55 kHz and noise sensitivity of 22 MHz/V. Implemented in a 0.13-μm CMOS process with a 1.2-V supply, the proposed ring-DCO is tuned by 24-bit frequency control word and operates from 1.76 to 3.74 GHz.Keywords:
Ring oscillator
Digitally controlled oscillator
A high-speed power efficient ring oscillator based digitally controlled oscillator(DCO) with a novel delay cell is presented. The proposed DCO has a large tuning range of 2.6 GHz by incorporating double-integral and integral tuning paths. It achieves a good phase noise with its current-starved ring oscillator type and with its two negative transconductance cells at each delay cell outputs in its integral tuning path by saving the static current consumed by the integral tuning. The current-starved differential ring oscillator structure guarantees the high-speed of operation. The DCO is implemented in 60 nm CMOS process and operates from 1.4 GHz to 4 GHz with a resolution varies from 25 kHz to 0.08 MHz by consuming a power from 0.7 mW to 2.8 mW, respectively. The proposed DCO achieves a low phase noise of -114.7 dBc/Hz at 1.4 GHz and of -112.8 dBc/Hz at 4 GHz with an offset of 10 MHz.
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Ring oscillator
Digitally controlled oscillator
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본 논문에서는 전원 잡음에 둔감한 발진 주파수를 가지는 CMOS ring oscillator를 설계하였다. 제시한 전원 잡음 보상형 ring oscillator 는 on-chip 으로 내장된 적응형 bias-current 및 voltage-swing 조절 회로를 이용하였다. 설계된 ring oscillator 는 0.13-㎛ 공정을 사용하였고 전원 변화에 대한 민감도는 0.013%-f oscillator /1%-V dd 를 보이고 있다.
Ring oscillator
Digitally controlled oscillator
Pierce oscillator
RC oscillator
Parametric oscillator
Colpitts oscillator
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Ring oscillator
Digitally controlled oscillator
Pierce oscillator
Colpitts oscillator
Clock generator
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A new four stage differential ring voltage-controlled oscillator (VCO) is introduced in this paper for wide tuning-range applications of phase-locked loops (PLLs). A differential delay cell equipped with a CMOS inverter-based frequency tuning mechanism is proposed to widen the tuning frequency range of the ring oscillator. 90nm CMOS technology(GPDK90) is utilized to simulate the proposed oscillator. The supply voltage selected for this design is 1.0V. The built-in oscillator achieves a tuning frequency range of 2.07 GHz to 7.56 GHz, and this range is obtained by increasing the control voltage from 0.0V to 0.5V. The proposed oscillator can produce 526µW of power at its maximum. The mentioned oscillator attained a power efficiency value of 0.06mW/GHz. At 1 MHz offset, the proposed oscillator exhibits -86.28dBc/Hz phase noise, and the obtained value of Figure of Merit (FOM) is -166.64 dBc/Hz.
Ring oscillator
dBc
Digitally controlled oscillator
Figure of Merit
Colpitts oscillator
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A Digitally controlled oscillator (DCO) designed with digital programming using binary coded capacitor load is presented. The Digitally Controlled Oscillator is basically designed based on the ring oscillator, where delay of the ring oscillator is controlled digitally. The delay cell is implemented to synthesize digital input. The oscillation frequency is controlled digitally with control bits applied to the input of binary coded capacitive load. The nine-bit DCO implemented using the 45nm technology at 1 V supply voltage shows oscillation frequency variation in the range of 1.2486-1.2523 GHz, with a change in control bits. The design implementation has better stability against supply voltage variation compared to the conventional voltage controlled oscillator (VCO).
Digitally controlled oscillator
Ring oscillator
Oscillation (cell signaling)
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An eight-phase digitally controlled ring oscillator that employs a multipoint-tuning technique is presented. The DCO fine-tuning is realized by multi-variable RC loads to improve frequency resolution and coupled-noise rejection by reducing DCO gain. With a set of rotating control logic circuits and eight DACs, the DCO achieves a minimum frequency quantization step of 55 kHz and noise sensitivity of 22 MHz/V. Implemented in a 0.13-μm CMOS process with a 1.2-V supply, the proposed ring-DCO is tuned by 24-bit frequency control word and operates from 1.76 to 3.74 GHz.
Ring oscillator
Digitally controlled oscillator
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In this paper, a 3.125 GHz four stage voltage controlled ring oscillator is presented. The oscillator has been designed in a 0.18 μm CMOS process with a 1.8 V supply. Behavioural simulations predict an 18% tuning range for the oscillator, with a -91 dBc/Hz phase noise at a 1 MHz offset. Its power consumption has been simulated to be only 12.6 mW.
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Ring oscillator
Digitally controlled oscillator
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This paper proposes a 2.4 GHz RF oscillator with a very low close-in phase noise performance. This is composed of a low frequency crystal oscillator and three frequency multipliers such as two doubler (X2) and one tripler (X3). The proposed oscillator is implemented as a hybrid type circuit design using a discrete silicon bipolar transistor. The measurement results of the proposed oscillator structure show -115 dBc/Hz close-in phase noise at 10 kHz offset frequency, while only dissipating 5 mW from a 1-V supply. Its close-in phase noise level is very close to that of a low frequency crystal oscillator with little degradation of noise performance. The proposed structure which is consisted of a low frequency crystal oscillator and a frequency multiplier provides new method to implement a low power low close-in phase noise RF local oscillator.
Frequency multiplier
dBc
Crystal oscillator
Oscillator phase noise
Pierce oscillator
Crystal oven
Digitally controlled oscillator
Flicker noise
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In this work, we have designed and simulated a Gate All Around TFET (GAATFET) based 3 stage ring oscillator circuit and compared its performance with the CMOS based counterpart. The results of SPICE simulations indicate that GAATFET based ring oscillator circuit consumes 3.5 times lower power consumption in active mode than CMOS based ring oscillator. However, 0.43 ns and 0.17 ns of propagation delay is observed for GAATFET based ring oscillator and CMOS based ring oscillator circuit respectively. The obtained output waveform frequency for CMOS based ring oscillator is 2.5 times higher than the GAAATFET based ring oscillator. Further, undershoot is also investigated and it is found that the amplitude of undershoot in case of GAATFET based oscillator is roughly 6.5 times more as compared to CMOS based counterpart. The undershoot and delay observed in case of GAATFET based ring oscillator can be over-shaded by the fact that it has lower active power consumption than the CMOS based ring oscillator. Simulation results signify that GAATFET based ring oscillator can be deployed in future low power VLSI circuits and systems.
Ring oscillator
Digitally controlled oscillator
Pierce oscillator
RC oscillator
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