<title>Optimization of LPCVD silicon oxynitride growth to large refractive index homogeneity and layer thickness uniformity</title>
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The thickness non-uniformity and refractive index in- homogeneity of silicon oxynitride thin films, grown by low pressure chemical vapor deposition, have been optimized. The present work was especially motivated by the application of these thin films as well defined waveguides in phase-matched second harmonic generating devices, which are well known for their extremely high requirements to uniformity and homogeneity. However, other demanding integrated optical components like gratings, sensor systems, telecommunication devices, etc., also strongly benefit from highly uniform waveguides.Keywords:
Silicon oxynitride
Conformal coating
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Physical vapor deposition
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Silicon oxynitride
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Abstract Atomic layer deposition (ALD) is well known as the most advanced coating technique so far due to its unique deposition characteristics, such as uniformity and 3D conformality. ALD is not limited to coating technologies alone; however, over the past few decades, it has been extended beyond coating technologies to address several bottlenecks in the semiconductor industry. This short review article provides a summary of previous studies published on various approaches to using ALD to overcome the technological challenges in Si device fabrication beyond, that is, ALD for multiple patterning, area‐selective atomic layer deposition, atomic layer etching, and ALD for dry photoresist. The purpose of this review is to determine the existing trend in ALD for noncoating applications and to understand and provide a layout of what ALD can bring in the future. In addition, it helps in appreciating the potential of ALD in existing and future noncoating processes. Furthermore, this study provides a developing route for ALD in other noncoating applications in the semiconductor industry. This review may help ALD researchers in its use in various noncoating processes in the future to extend Moore's law.
Semiconductor Industry
Deposition
Atomic layer epitaxy
Photoresist
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We review our recent results on using Atomic Layer Deposition (ALD) in fabrication of nanophotonic waveguide devices. ALD is a unique thin film deposition method providing atomic level control of film composition and thickness, perfect step coverage, and large-area uniformity. We employ the advantages of ALD in connection with Sinanophotonics. We present several new structures based on filling silicon slot waveguides or coating the silicon strip waveguides with ALD-grown materials. Also ALD grown TiO2 strip waveguides are introduced.
Nanophotonics
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Waveguide
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The nucleation and growth of Pt atomic layer deposition (ALD) on Al2O3 substrates was studied using (methylcyclopentadienyl)-trimethyl platinum (MeCpPtMe3) and O2 plasma as the reactants. The nucleation of Pt ALD was examined on Al2O3 ALD substrates at 300 °C using a variety of techniques including spectroscopic ellipsometry, x-ray reflectivity, x-ray photoelectron spectroscopy, and scanning electron microscopy. These techniques revealed that Pt ALD does not nucleate and grow immediately on the Al2O3 ALD substrates. There was negligible Pt ALD during the first 38 ALD cycles. The Pt ALD growth rate then increased substantially during the next 12 ALD cycles. Subsequently, the Pt ALD growth rate reached a steady state linear growth regime for >50 ALD cycles. These measurements suggest that the Pt ALD first forms a number of nanoclusters that grow slowly during the first 38 ALD cycles. These islands then merge during the next 12 cycles and yield a steady state Pt ALD growth rate of ∼0.05 nm/cycle for >50 ALD cycles. The Pt ALD film at the onset of the steady state linear growth regime was approximately 2–3 nm in thickness. However, the SEM images of these Pt ALD films appeared corrugated and wormlike. These films also had a density that was only 50–70% of bulk Pt. Film densities that were consistent with bulk Pt were not observed until after >100 ALD cycles when the Pt ALD films appeared much smoother and were 4–5 nm in thickness. The Pt ALD nucleation rate could be enhanced somewhat using different O2 plasma parameters.
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Plasma-enhanced atomic layer deposition (PEALD) technique using trimethylaluminum (TMA) precursors and gas mixed with gas, was adopted as a promising method for growing thin films with improved electrical properties compared to the conventional ALD. PEALD provides a higher growth rate of 0.18 nm/cycle than ALD does of 0.11 nm/cycle at 100°C. Due to superior film density of PEALD compared to that of ALD, excellent breakdown fields of 9 MV/cm were obtained in PEALD The dielectric constants for films grown by PEALD were also higher than constants produced by ALD. © 2004 The Electrochemical Society. All rights reserved.
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Atomic layer deposition (ALD) is a technique capable of producing ultrathin conformal films with atomic level control over thickness. A major drawback of ALD is its low deposition rate, making ALD less attractive for applications that require high throughput processing. An approach to overcome this drawback is spatial ALD, i.e., an ALD mode where the half-reactions are separated spatially instead of through the use of purge steps. This allows for high deposition rate and high throughput ALD without compromising the typical ALD assets. This paper gives a perspective of past and current developments in spatial ALD. The technology is discussed and the main players are identified. Furthermore, this overview highlights current as well as new applications for spatial ALD, with a focus on photovoltaics and flexible electronics.
Deposition
Atomic layer epitaxy
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Atomic Layer Deposition (ALD) is well known for its high film quality and high conformality, but limited by the low deposition rate. Beneq proposes a novel approach using Rotary Spatial Plasma Enhanced ALD process, which can reach deposition rates 10× higher than traditional pulsed ALD. This technology also enables use of PEALD in batch mode with high throughput. This paper describes the technology in more details.
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Abstract Optical waveguides may be formed in silica by an increase in refractive index resulting from a compaction of the glass network caused during radiation damage. An additional index enhancement had been ascribed to chemical changes during nitrogen implantation. The present work confirms this higher level of index enhancement of up to 4%. Measurements of the refractive index profile before and after annealing suggest that whereas electronically generated damage is annealed by 450°C, the changes in the region of the implanted nitrogen are stable. In the region of maximum nitrogen concentration the presence of a glass phase resembling silicon oxynitride is proposed. However a comparison of the refractive index profile with computer simulations of impurity and defect profiles suggests that radiation damage induced by nuclear collisions contributes to the refractive index profile even in the annealed samples.
Silicon oxynitride
radiation damage
Silica glass
Step-index profile
Refractive index profile
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