Luminescent decay kinetics in a quasi-one-dimensional crystal, C5H10NH2PbI3
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Exponential decay
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Porous Silicon
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In present paper MgAl(SO4)2F:Dy3+ and NaMgSO4F:Dy3+ halosulphate phosphors are synthesized by wet chemical method. XRD and photoluminescence (PL) characterization of phosphors has been reported in this paper. The effect of Dy3+ doping on the photoluminescence (PL) characteristics of MgAl(SO4)2F and NaMgSO4F matrix has been studied. The photoluminescence (PL) emission spectra shows the PL peaks at 469 and 494nm in NaMgSO4F:Dy and 482, 571 nm PL peaks in NaMgSO4F:Dy phosphors.
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Photoluminescence excitation
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In this work, we present a detailed investigation of the low temperature emission properties of ZnSeO alloys by means of photoluminescence, micro-photoluminescence, and time-resolved photoluminescence. We show that the low temperature broad photoluminescence spectrum of ZnSeO attributed to the recombination of localized excitons is composed of sharp lines related to individual trapping states. Based on studies of photoluminescence thermal quenching from individual trapping states and photoluminescence dynamics, the mechanism of nonradiative recombination in ZnSeO alloys is discussed. Moreover, an unexpected decrease of the low temperature Stokes shift with increasing oxygen content is observed in contrast to what has been reported for GaAs based highly mismatched alloys. The possible origin of this effect is proposed.
Photoluminescence excitation
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We examined the change in photoluminescence spectra of porous Si when it is oxidized then deoxidized chemically. After both steps, photoluminescence shifted to higher frequencies and increased in intensity. These shifts to higher frequencies indicate the photoluminescence is a result of the quantum size effect. Moreover, the increase in photoluminescence intensity after oxidation suggests that termination by hydrogen on the porous Si surface does not always play a key role in the photoluminescence mechanism.
Photoluminescence excitation
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Thermostability
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In this work we investigate the excitonic properties of (4-FC6H4C2H4NH3)2PbI4 hybrid organic/inorganic thin films. We first use a standard point-by-point photoluminescence mapping. The maps formed using the photoluminescence intensity, line width, and broadening reveal the presence of structural defects. Using a statistical treatment of the data we found that the spatial fluctuations of the photoluminescence peak wavelengths are rather small compared to the photoluminescence line width. Moreover, we report the first direct observation of spatially resolved excitonic photoluminescence in this type of materials using dark-field imaging of white-light pumped photoluminescence. Owing to the rapid acquisition time of the dark-field images, their temperature dependence was studied, and the thermal behavior of the photoluminescence was investigated using this technique. We show that photoluminescence mapping combined with dark-field imaging and spectroscopy provides valuable information on the excitonic properties of hybrid organic/inorganic thin films.
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The photoluminescence decay properties of indium-doped ZnS thin films grown epitaxially on (100) GaP were investigated. Three exponential components were found in the decay curves, of which the time constants were of the order of 1, 10 or 100 µs at room temperature. Upon increasing the In concentration, the time constants increased. By lowering the temperature the photoluminescence decay became faster, and at low temperatures the time constant was insensitive to the temperature. The results can be well described by the three-level model of Di Bartolo. It could be shown that the photoluminescence originated from the trapping-limited D-A pair emission, and that the decay properties are determined mainly by the non-radiative recombination probabilities which depend on the In concentration.
Exponential decay
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Preface Luminescence of Metastable ZnO Nanostructures Photoluminescence Characterisation of Luminescence Materials: Halosulphate Phosphors Role of Mn Concentration in Luminescence of Nanocrystalline ZnS Low Temperature Photoluminescence Analysis on Properties of CdZnTe Bulk Crystals Photoluminescence of Si Nanocrystals Embedded in SiO2 Towards an Insight on the Photoluminescence of Disordered Titanates from a Joint Experimental and Theoretical Analysis Mechanisms Behind Photoluminescent Emission in Scheelite Structures Microplasma Synthesis of Tunable Photoluminescence Si Quantum Dots Recent Development of Luminescent Materials Prepared by the Sol-Gel Process Enhanced Photoluminescence of Rare-Earth Activators in Sol-Gel Derived SiO2 by Energy Transfer from ZnO Nanoparticles and Co-Activators Studies of Photoluminescence Spectra of InGaN/GaN Heterostructures Index.
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