Photoluminescence of porous Si, oxidized then deoxidized chemically
109
Citation
19
Reference
10
Related Paper
Citation Trend
Abstract:
We examined the change in photoluminescence spectra of porous Si when it is oxidized then deoxidized chemically. After both steps, photoluminescence shifted to higher frequencies and increased in intensity. These shifts to higher frequencies indicate the photoluminescence is a result of the quantum size effect. Moreover, the increase in photoluminescence intensity after oxidation suggests that termination by hydrogen on the porous Si surface does not always play a key role in the photoluminescence mechanism.Keywords:
Photoluminescence excitation
Cite
We present a photoluminescence and photoluminescence excitation study of CdTe quantum dots, prepared via a novel organometallic approach. The global photoluminescence (excited at the energy above the absorption edge) showed a red shift of 75 meV with respect to the first absorption peak. This band edge emission was found to be strongly dependent on the excitation photon. Resonant emission spectra showed a pronounced spectral shift and line narrowing with decreasing excitation energy. The resonant Stokes shifts were extracted from photoluminescence and photoluminescence excitation data. The minimum magnitude of the resonant Stokes shift of 14 meV was obtained at room temperature.
Photoluminescence excitation
Stokes shift
Absorption edge
Cite
Citations (7)
Here, we fabricated Cs-rich and Pb-rich Cs4PbBr6 samples with green photoluminescence emission and investigated the difference between them. Both Cs-rich and Pb-rich Cs4PbBr6 samples show strong green emissions at about 520 nm; however, the photoluminescence excitation properties of the green emission are greatly different from each other in the ultraviolet region. The photoluminescence excitation spectra of the Cs-rich sample have a broad excitation band from 334 to 500 nm. In comparison, the Pb-rich sample has two additional excitation bands of 250–300 and 324–334 nm. By correlating the experimental data with the theoretical calculations, the green photoluminescence emission can be attributed to the embedded CsPbBr3 nanocrystals, and the interlayer between Cs4PbBr6 and CsPbBr3 nanocrystals plays an important role in determining their photoluminescence excitation properties. It was proposed that the existence of the CsBr interlayer between the Cs4PbBr6 matrix and embedded CsPbBr3 nanocrystals block the electron transfer of excited Cs4PbBr6 and induce photoluminesence quenching under excitation of 250–300 nm.
Photoluminescence excitation
Ultraviolet
Cite
Citations (18)
It is shown that temperature transformation of photoluminescence and photoluminescence excitation spectra are caused by presence of two different excitation channels. Photoluminescence intensity decrease under cooling is explained by impediment of energy transfer from adsorbent to luminescence centers while its increase under excitation via other channel is observed under cooling.
Photoluminescence excitation
Porous Silicon
Cite
Citations (0)
Photoluminescence excitation
Porous Silicon
Cite
Citations (1)
Photoluminescence excitation
Porous Silicon
Ultraviolet
Cite
Citations (9)
Porous Silicon
Photoluminescence excitation
Cite
Citations (28)
Using photoluminescence, photoluminescence excitation, and secondary ion mass spectroscopy (SIMS) investigations we show in this paper that two luminescence objects with different PL excitation spectra exist in PS. Two stages of photoluminescence aging were observed which are connected with desorption and oxidation processes.
Photoluminescence excitation
Porous Silicon
Cite
Citations (0)
Abstract The photoluminescence excitation spectra are presented of weakly and highly compensated CuGaSe 2 , grown under Cu‐excess and under Cu‐deficiency, respectively. An overlap is observed between the photoluminescence and the excitation spectrum in the Cu‐poor material, indicating fluctuating potentials due to high compensation, whereas no overlap is observed in material grown under Cu‐excess, indicating flat bands. The photoluminescence excitation spectra can be used as measure for the absorption spectrum in the case of flat bands, but not in the case fluctuating potentials, where different emission energies probe different depths of the fluctuations. Methods for the determination of the fluctuation amplitude from the photoluminescence and the excitation spectra are discussed. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Photoluminescence excitation
Cite
Citations (5)
Photoluminescence excitation
Cite
Citations (7)