Optimization of Fabrication Process for MEMS Based Microneedles Using ICP Etching Technology
Muhammad Waseem AshrafShahzadi TayyabaNitin AfzulpurkarAsim NisarChumnarn PunyasaiKaroon SaejokJakrapomg SupadechNithi AtthiCharndet Hruanun
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In this paper, optimization of fabrication process for microneedles has been presented. Using inductively coupled plasma (ICP) etching technology, fabrication of out-of-plane hollow silicon microneedles for blood extraction has been carried out. Sharp tip microneedles with length 1100 µm were designed for fabrication. The fabrication of microneedles was not successful because the lumen section was fabricated first and then hole was created for fluid flow. Previously, using same fabrication method successful fabrication of microneedles was done for drug delivery with length 200 µm. This fabrication method is not suitable for long structure. Thus, the alternative microneedle fabrication steps using ICP etching have been developed and presented in this paper. These steps can be more optimized and suitable for sharp tip, long and hollow structure.This paper reports a new high sensitivity accelerometer with symmetrical double-sided serpentine beam-mass structure and fabricated with a novel pre-buried mask etching fabrication technology. To get the symmetrical double-sided beam with defined thickness, it needs to do the photolithograph on the deep etched wafer again in the etching process in the conventional fabricating methods. But the novel fabrication technology can bury several masks in the silicon dioxide before etching and open these pre-buried masks at the defined etching depth by the etch of silicon dioxide instead of doing photolithograph again, making the fabrication process simpler and more efficient. The prototype has the performance of low noise (40 μg) and μg-level Allan deviation of bias (2.2 μg in one hour), experimentally demonstrating the effectivity of the design and the novel fabrication technology.
Dry etching
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The authors developed an inductively coupled plasma etching process for the fabrication of hole-type photonic crystals in InP. The etching was performed at 70°C using BCl3∕Cl2 chemistries. A high etch rate of 1.4μm∕min was obtained for 200nm diameter holes. The process also yields nearly cylindrical hole shape with a 10.8 aspect ratio and more than 85° straightness of the smooth sidewall. Surface-emitting photonic crystal laser and edge emitting one were demonstrated in the experiments.
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Abstract Design and fabrication of 109.5° V-grooves based on two-step anisotropic etching techniques are demonstrated and reported. This new process can expose planes other than the commonly used {111} surfaces to form new geometrical shapes. V-grooves of 109.5° are demonstrated by etching and exposing {112} planes on (100) wafers with anisotropic KOH etchants. Theoretical foundations are analyzed with experimental verifications. This new class of two-step etching process extends the capability of MEMS manufacturing to make new geometrical shapes and may have potential applications for device fabrications that requires non-conventional contours.
Dry etching
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A simple one-step inductively coupled plasma etching technique has been developed for the fabrication of SiC resonant beam structures. Straight cantilever and bridge devices have been made successfully. The structures have been actuated and resonant frequencies ranging from ∼120 kHz to ∼5 MHz have been measured. Comparison of the theoretically simulated and experimentally measured resonant frequencies shows the presence of significant tensile stress in bridge structures while the cantilever beams are free of stress. The degree of the tension in the bridge structures has been found to be independent of the bridge length.
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A new process has been developed for the fabrication of AlGaAs-based MEMS which the inherent piezoelectric transduction present in this material to be used for sensing and actuation. The process combines molecular beam epitaxial growth of single-crystal Al0.3Ga0.7As multilayer, inductively coupled plasma reactive-ion etching (ICP-RIE), and highly selective wet etching of GaAs to produce released Al0.3Ga0.7As structures. The process has been validated through the fabrication of both cantilever and doubly clamped beam structures, and has wider use for applications where large electromechanical coupling strength and single-crystal heterostructure are desired.
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In this paper, optimization of fabrication process for microneedles has been presented. Using inductively coupled plasma (ICP) etching technology, fabrication of out-of-plane hollow silicon microneedles for blood extraction has been carried out. Sharp tip microneedles with length 1100 µm were designed for fabrication. The fabrication of microneedles was not successful because the lumen section was fabricated first and then hole was created for fluid flow. Previously, using same fabrication method successful fabrication of microneedles was done for drug delivery with length 200 µm. This fabrication method is not suitable for long structure. Thus, the alternative microneedle fabrication steps using ICP etching have been developed and presented in this paper. These steps can be more optimized and suitable for sharp tip, long and hollow structure.
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Ni-P, Ni-B and SiO2 films were used as hard mask materials in Si etching using a high-density inductively coupled plasma (ICP) reactor for MEMS fabrication. The Ni-P and Ni-B films were deposited using an electroless method, and the SiO2 film was thermally grown in a conventional furnace. Two etching processes were used to characterize the masks. The first uses SF6/Ar gas mixture varying bias power and process time, and the second is a Bosch like process, using C4F8 as a passivation gas. The Ni-P mask showed the highest resistance to etching, being applicable in Si deep etching (>100m); while the SiO2 mask was found to be less resistive, especially under strong ion bombardment (high bias power). The Ni-B mask was found to be highly porous, resulting in formation of micropillars during ecthing, which may be interesting for some apllications such as sensors.
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We demonstrate a novel fabrication technique for making nanomechanical structures from bulk materials with no sacrificial layer. Angled ion etching is used to suspend single- and double-clamped beams from GaAs initially. Both beams are fabricated successfully by dry anisotropic ion etching. Resonance characteristics of the fabricated beams are also investigated from 300 to 15 K. A quality factor Q of 5700 is obtained at 40 K, showing a high mechanical reliability. This technique does not rely on conventional sacrificial etching and will enable us to fabricate electro-mechanical structures from a large number of bulk materials in the micro/nano electro mechanical systems (MEMS/NEMS) field.
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Dry etching
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