Abnormal Photoluminescence Properties of Polycrystalline ZnO Nanowire Arrays Synthesized by Electrodeposition
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Large-scale ZnO nanowire arrays are synthesized by electrodeposition with subsequent heat treatment in atmosphere ambient at 450–650°C. Photoluminescence (PL) is investigated at 295 K. Abnormal PL properties of an unusual sharp emission at 485 nm and a broad ultraviolet emission which are different from the other works of ZnO PL before are observed. Field emission scanning electronic microscopy and transmission electron microscopy results show that the length of ZnO nanowires is nearly 5 μm and their diameter is about 70 nm. X-ray diffraction and electron diffraction results reveal that the ZnO nanowires are a polycrystalline structure.Keywords:
Ultraviolet
Photoluminescence excitation
Porous Silicon
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光的吸收的理解是必要的为有效光电并且有 IIIV nanowire 数组的 photodetection 应用。这里，我们相关有当模特儿的实验并且试验性地为改变 nanowire 直径和长度在 InP nanowire 数组验证光的预言的吸收。我们发现那在 400 nm 的程度中的长 nanowires 能吸收的 2,000 nm 有在乐队上面的精力的 94% 事件光豁开并且作为后果，点亮在简单光线光学，描述哪个将在 nanowires 之间旅行能被 nanowires 高效地吸收。当光从进数组最高区域的空气被联合时，我们的大小证明为长 nanowires 的吸收由插入思考损失是有限的。这些思考损失能被最近把一条更小的直径介绍给 nanowire 部分到空气减少最高区域。为有如此的 nanowire 形态学调整的 nanowire 数组，我们发现吸收比与增加 nanowire 的其余部分的直径单调地增加。
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Photoluminescence excitation
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In this work, we present a detailed investigation of the low temperature emission properties of ZnSeO alloys by means of photoluminescence, micro-photoluminescence, and time-resolved photoluminescence. We show that the low temperature broad photoluminescence spectrum of ZnSeO attributed to the recombination of localized excitons is composed of sharp lines related to individual trapping states. Based on studies of photoluminescence thermal quenching from individual trapping states and photoluminescence dynamics, the mechanism of nonradiative recombination in ZnSeO alloys is discussed. Moreover, an unexpected decrease of the low temperature Stokes shift with increasing oxygen content is observed in contrast to what has been reported for GaAs based highly mismatched alloys. The possible origin of this effect is proposed.
Photoluminescence excitation
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We examined the change in photoluminescence spectra of porous Si when it is oxidized then deoxidized chemically. After both steps, photoluminescence shifted to higher frequencies and increased in intensity. These shifts to higher frequencies indicate the photoluminescence is a result of the quantum size effect. Moreover, the increase in photoluminescence intensity after oxidation suggests that termination by hydrogen on the porous Si surface does not always play a key role in the photoluminescence mechanism.
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Thermostability
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In this work we investigate the excitonic properties of (4-FC6H4C2H4NH3)2PbI4 hybrid organic/inorganic thin films. We first use a standard point-by-point photoluminescence mapping. The maps formed using the photoluminescence intensity, line width, and broadening reveal the presence of structural defects. Using a statistical treatment of the data we found that the spatial fluctuations of the photoluminescence peak wavelengths are rather small compared to the photoluminescence line width. Moreover, we report the first direct observation of spatially resolved excitonic photoluminescence in this type of materials using dark-field imaging of white-light pumped photoluminescence. Owing to the rapid acquisition time of the dark-field images, their temperature dependence was studied, and the thermal behavior of the photoluminescence was investigated using this technique. We show that photoluminescence mapping combined with dark-field imaging and spectroscopy provides valuable information on the excitonic properties of hybrid organic/inorganic thin films.
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Abstract Simultaneous measurement of photoluminescence intensity and photoluminescence decay time of porous silicon was used for optical detection of chemical species in gas phase. For the studied set of analytes we observed that quenching of photoluminescence intensity and shortening of photoluminescence decay time scale with the analyte concentration. Simultaneous acquisition of photoluminescence intensity and photoluminescence decay time enabled to improve reliability of the sensor response measurements. Different sensor sensitivity of photoluminescence intensity and decay time to the presence of chemical species makes possible to discriminate between various classes of organic molecules. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Photoluminescence excitation
Porous Silicon
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Nanocrystalline material
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