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    GaN light-emitting diodes with an Al-coated graphene layer as a transparent electrode
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    Abstract:
    We fabricated GaN light-emitting diodes with a layer of graphene as a transparent electrode. A 3-nm-thick Al layer was deposited on the graphene layer by electron-beam evaporation. This Al layer plays an important role in protecting the graphene layer during the device fabrication process. Moreover, this Al layer can also enhance the light emission of GaN light-emitting diodes through the investigation of electroluminescence spectra. The significantly improved light emission is attributed to the current expansion, the enhanced plasmonic density of states, and the decreased non-radiative recombination rate.
    The possibility of the electroluminophore semiconductors of the II-VI group to the construction of the electric field intensity sensors are presented. Using ZnS:Mn and ZnS:Cu luminophors, the fiber optic intensity of electric field sensors were elaborated. This kind of electric field sensors belong to the group of intensity fiber optic sensors. Electroluminescent phenomena of two groups pf electroluminescent effects are classified as: 1) internal electroluminescence and 2) carrier-injection electroluminescence. In the paper there are described sensors based on carrier-electric injection electroluminescence.
    Intensity
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    The influence of electron beam evaporation rate on the properties of Ti films was studied at different rates with the same Ti film thickness.SEM photos showed few differences of the surface roughness among the Ti films.But,the resistance test indicated that the square resistance became smaller while the evaporation rate got higher,and it was believed that the thin films became denser while the Ti evaporation rate increased.In DC test of devices,the Schottky barrier heights(SBH)varied in a certain range with different Ti evaporation rates.Hence,improve the SBH could be improved by optimizing the evaporation rate.Therefore,the Ti evaporation rate is one of the key factors of Schottky barrier for GaAs device fabrication.
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    While CaS:Pb is already well known as an efficient UV/blue emitting photoluminescent phosphor, only preliminary results on its thin film electroluminescence are available. Thin film electroluminescent devices with a CaS:Pb active layer were deposited by electron beam evaporation. It was found that both the activator concentration and the substrate temperature during deposition strongly influence the optical characteristics. X-ray photoelectron spectroscopy was used to determine the composition of the layers, and the spectral characteristics were compared with results from photoluminescence.
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    Cd S thin films were prepared by electron beam evaporation(EBE) method with using high pure blocky Cd S on glass substrate. The crystal structure and surface morphology of the films were characterized by X-ray diffraction and atomic force microscopy;the optical and electrical properties of the films were analyzed by four probe resistance tester and ultraviolet visible spectrophotometer. The results showed that the evaporation rate had significant effects on the films structure and properties. The Cd S films prepared at 10?S-1were uniform and dense surface morphology and were presented the strongest peak intensities of the XRD patterns. The photoelectric properties were best. Moreover,the photo sensitiveness reached 7.7×102,the minimum light resistance was 1350Ω/□.
    Photoelectric effect
    Morphology
    Crystal (programming language)
    Ultraviolet
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    Eelectroluminescence is a solid light. Based on the different structure and working principle, Electroluminescence (EL) can be divided into inorganic electroluminescence and organic electroluminescence. In this paper some rresearches on electroluminescence are reviewed. The principle, structure and application of inorganic electroluminescence and organic electroluminescence are illustrated. Some recent focuses are discussed. EL has wide future. They are better than other display technologies for the flat panel display applications.
    Electroluminescent display
    Deposition
    Titanium oxide
    Vacuum evaporation
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