Short-Period Superlattices of (GaP)<sub>n</sub>(AlP)<sub>n</sub> Grown by Metalorganic Vapor Phase Epitaxy

Short-Period Superlattices of (GaP)_n(AlP)_n Grown by Metalorganic Vapor Phase Epitaxy

Japanese Journal of Applied Physics (1991)

Akio Morii Isao Ohno Atsushi Kanda Kazumasa Arai Koichi Tokudome Kazuhiko Hara Junji Yoshino Hiroshi Kukimoto

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Abstract:

Short-period superlattices of (GaP) n (AlP) n have been grown by metalorganic vapor phase epitaxy. X-ray diffraction measurements have confirmed the formation of the structures, where n ranges from 4 to 10. Low-temperature photoluminescence has shown characteristic emission peaks, which shift toward higher energies and tend to increase in intensity with decreasing n . These results, together with the band discontinuity between GaP and AlP which was estimated from that between GaP and Al 0.6 Ga 0.4 P, strongly indicate that the (GaP) n (AlP) n system forms the superlattices of a type-II band alignment.

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Vapor phase

Discontinuity (linguistics)

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Semiconductor materials and devices

Semiconductor materials and interfaces

Graphene research and applications

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Bandaoti guangdian (1996)

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Materials science forum (2000)

L.B. Rowland Greg Dunne Jaime A. Freitas

Vapor phase

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Selective Embedded Growth of Al_xGa_1-xAs by Low-Pressure Organometallic Vapor Phase Epitaxy

Japanese Journal of Applied Physics (1986)

Koichi Kamon Shigenori Takagishi Hideki Mori

Selective embedded growth of Al x Ga 1- x As ( x ≤0.35) in grooves of patterned substrates has been achieved for the first time by low-pressure organometallic vapor phase epitaxy (LP-OMVPE). Epitaxial Al x Ga 1- x As layers are embedded only in chemically etched grooves, while no polycrystalline deposition occurs on the masked area. The layers grown in grooves with the reverse-mesa cross sections, formed in the [110] direction, are uniform in thickness and show flat-smooth surfaces throughout. These results indicate that LP-OMVPE is a very promising technique for monolithic device integration.

Vapor phase

Deposition

10.1143/jjap.25.l10

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Growth of GaAs epitaxial layers prepared in the laboratory with an integrated safety MOCVD system

Applied Surface Science (1988)

Tetsuji Imai Shunro Fuke Katsumi Mori Kazuhiro Kuwahara

Lattice constant

10.1016/0169-4332(88)90356-x

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Citations (5)