The Staebler-Wronski effect in microcrystalline silicon films
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Light-induced dark- and photoconductivity changes (so-called SWE) have been investigated on GD undoped microcrystalline Si:H(μc-Si:H). The SWE decreases and reaches vanishing as the grain size increases. An interpretation for the two-phase structure and the contribution of grain boundary defects is given.Keywords:
Microcrystalline
Microcrystalline silicon
Photoconductivity
We investigated the structural, electrical, and optical properties as well as light-induced degradation characteristics of silicon films prepared by photochemical vapor deposition at various hydrogen dilution ratios. The protocrystalline silicon deposited before the onset of the microcrystalline regime was most stable against light soaking. However, the films deposited at the onset of the microcrystalline regime, known to have the most competent device quality and stability, were observed to be less stable. Such instability at the onset of the microcrystalline regime is correlated with the existence of the clustered phase hydrogen that indicates microvoids in the films.
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Abstract We developed high performance as‐deposited microcrystalline TFT. The microcrystalline silicon was deposited by novel MSEP (Metal Surface microwave Excitation Plasma)‐CVD with high deposition rate of over 20 nm/min and its crystalline ratio was over 70 %. TFT showed high mobility of 1.3 cm 2 /Vs.
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The phototransport properties of plasma deposited highly crystalline undoped hydrogenated microcrystalline silicon films were studied by measuring the steady state photoconductivity (SSPC) as a function of temperature and light intensity. The films possessing different thicknesses and microstructures had been well characterized by various microstructural probes. Microcrystalline Si films possessing dissimilar microstructural attributes were found to exhibit different phototransport behaviors. We have employed numerical modeling of SSPC to corroborate and further elucidate the experimental results. Our study indicates that the different phototransport behaviors are linked to different features of the proposed density of states maps of the material which are different for microcrystalline Si films having different types of microstructure.
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The most important features of microcrystalline silicon (/spl mu/c-Si:H) and microcrystalline silicon based p-i-n solar cells (specially those deposited by VHF-glow discharge) are reviewed. Since such material has been recognized to be a photovoltaically active material, stabilized cell efficiencies have steadily risen and have now reached 12% in the so called "micromorph" (microcrystalline/amorphous) tandem cell configuration.
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Light-induced dark- and photoconductivity changes (so-called SWE) have been investigated on GD undoped microcrystalline Si:H(μc-Si:H). The SWE decreases and reaches vanishing as the grain size increases. An interpretation for the two-phase structure and the contribution of grain boundary defects is given.
Microcrystalline
Microcrystalline silicon
Photoconductivity
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The objective of the research under this subcontract is to explore, identify, evaluate, and develop non-conventional photovoltaic technologies capable of making a breakthrough in the production of low-cost electricity from sunlight. The specific objectives are to (1) develop microwave glow-discharge parameters for the deposition of high-quality microcrystalline silicon (mc-Si:H) thin films at high rate, (2) characterize this microcrystalline material, and (3) fabricate high-efficiency microcrystalline nip solar cells.
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Microcrystalline silicon
Deposition
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Improvement in film growth technology requires a knowledge of the correlation between microstructural and deposition parameters with electrical properties in hydrogenated microcrystalline Si films. Our study indicates that fractional compositions of the constituent crystallite grains in fully crystallized undoped microcrystalline Si films is a unique microstructural feature that defines the film microstructure and can be well correlated to the electrical transport properties as well.
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