Passivation study of multi-crystalline silicon wafer with i-a-Si:H layer deposited by HWCVD
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The traditional passivation processes, standard RCA cleaning and 1% HF aqueous solution immersion, were introduced to passivate the surfaces of p-type Si(100) wafers for heterojunction with intrinsic thin-layer (HIT) solar cell application. The passivation stability was checked by monitoring the time decay of the effective minority carrier lifetime of the Si wafer in air via the microwave photoconductive decay (μPCD) method. The results show that the passivation effect is greatly dependent on the initial surface morphology of
the Si wafer. During the subsequent exposure in air, the obtained effective minority carrier lifetime decays rapidly, corresponding to that the Si surface states increase greatly. Such decay occurs more severely on the textured surface than on the polished one, which gives a time limitation to the subsequent processes in the HIT solar cell fabrication. So, such passivation processes need further improvement. The results also prove that the effective
minority carrier lifetime measurement can be adopted as an efficient and convenient method to check the passivation stability of the Si surface treated by wet-chemical methods.
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With the development of crystalline silicon solar cell technology and the reduction of solar cell thickness,the technology of cell surface passivation becomes more important to improve solar cell conversion efficiency.Surface passivation membrane as well as the role played by the membrane crystalline silicon solar cells was introduced.Meanwhile,several kinds of passivation methods were analyzed,including PECVD,hydrogenated a-Si,thermally grown and atomic layer deposition.Advantages and disadvantages of these passivation methods were discussed.Existing problems in the process of cell surface passivation were presented,and the corresponding measures and development trend were put forward.Surface passivation is one of the effective methods to increase the conversion efficiency of the crystalline silicon solar cells,thus still the global research hot spot on the way forward.
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Impacts of reduction of deep levels and surface passivation on carrier lifetimes in p-type 4H-SiC epilayers are investigated. The authors reported that the carrier lifetime in n-type epilayers increased by reduction of deep levels through thermal oxidation and thermal annealing. However, the carrier lifetimes in p-type epilayers were not significantly enhanced. In this study, in order to investigate the influence of surface passivation on the carrier lifetimes, the epilayer surface was passivated by different oxidation techniques. While the improvement of the carrier lifetime in n-type epilayers was small, the carrier lifetime in p-type epilayers were remarkably improved by appropriate surface passivation. For instance, the carrier lifetime was improved from 1.4 μs to 2.6 μs by passivation with deposited SiO2 annealed in NO. From these results, it was revealed that surface recombination is a limiting factor of carrier lifetimes in p-type 4H-SiC epilayers.
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In the 1980s, advances in the passivation of both cell surfaces led to the first crystalline silicon solar cells with conversion efficiencies above 20%. With today's industry trend towards thinner wafers and higher cell efficiency, the passivation of the front and rear surfaces is now also becoming vitally important for commercial silicon cells. This paper presents a review of the surface passivation methods used since the 1970s, both on laboratory-type as well as industrial cells. Given the trend towards lower-cost (but also lower-quality) Si materials such as block-cast multicrystalline Si, ribbon Si or thin-film polycrystalline Si, the most promising surface passivation methods identified to date are the fabrication of a p–n junction and the subsequent passivation of the resulting silicon surface with plasma silicon nitride as this material, besides reducing surface recombination and reflection losses, additionally provides a very efficient passivation of bulk defects. Copyright © 2000 John Wiley & Sons, Ltd.
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Bis-[-3-(triethoxysilyl)propyl] tetrasulfide(a kind of silane,abbreviated as BTESPT)and an organic acid ester with long chain alkyl group(inhibitor A throughout)were used to synergistically passivate aluminum.Thus the Al samples were sequentially immersed in the silane(BTESPT)solution and inhibitor A solution,allowing the formation of compact hydropho-bic complex film on the surface of the Al surfaces.The final syn-ergistic passivation film was obtained by drying the hydrophobic complex film at 100℃ for 12 h.The corrosion resistance of the synergistic passivation film was evaluated using hydrogen-evolution test,weight loss test in alkaline solution,salt-fog test,and electrochemical test.The microstructure of the passivation film was examined by means of scanning electron microscopy(SEM),and the film-formation mechanism and the corrosion resistant mechanism of the film were discussed.It was found that the complex passivation film had excellent corrosion resistance.No heavy metals and fluorides were detected in the composite passivation film,meeting the requirements of European ROHS standard.
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본 연구는 고온고습 시험을 통하여 Cell 레벨에서의 표면관찰 및 효율저하를 분석하였다. 고온고습 시험조건은 KS C IEC-61215에서 제시한 PV 모듈하의 조건을 이용하여 온도 $85^{\circ}C$ , 습도 85%, 1000hr 동안 수행하였다. EL(Electroluminescence)촬영을 통하여 Cell 표면의 이상 유 무를 분석한 결과, 시간이 경과함에 따라, 부분적으로 표면이 손상되어 변색되는 것을 확인하였다. 고온고습 시험 전 단결정 Cell 및 다결정 Cell의 효율은 각각 17.7%, 15.5%였으며, 1000hr 수행 후 15.6%, 14.0%로 각각 11.9%와 9.3%의 감소율을 보였다. 또한, 경년 시 나타나는 전기적 특성을 분석하기 위하여 FF(Fill Factor)값을 분석한 결과, 고온고습 시험 후 단결정 Cell은 78.7%에서 75.0%로 4.7%, 다결정 Cell은 78.1%에서 76.7%로 1.8%의 감소율을 보였다. 태양전지 실리콘의 원자배열 및 순도에 따라 효율 변화에 영향을 받아 단결정 Cell이 다결정 Cell보다 효율저하가 크게 나타났다고 판단된다. 또한, FF감소율보다 효율 감소율이 크게 저하된 것을 확인할 수 있었으며, 이는 Cell의 외부환경적 요인에 의한 표면 손상이 p-n접합층 접촉저항과 경년 시 나타나는 FF 감소율보다 크게 영향을 준 것으로 판단된다. In this study, The report analysed the characteristics of power drop and damage of surface in solar cell through high temperature and humidity test. The solar cells were tested during the 1000hr in $85^{\circ}C$ temperature and 85% humidity conditions, that excerpted standard of PV Module(KS C IEC-61215). An analysis of the cell surface through EL(Electroluminescence), the cell has partly change of surface in yearly. Single-crystalline Solar cell efficiency is decreased from 17.7% to 15.6% and decreasing rate is 11.9%. On the other hand, Poly-crystalline Solar cell efficiency is decreased from 15.5% to 14.0% and decreasing rate is 9.3%. A comparison of the fill factor for analysis of electro characteristic in yearly, Single-crystalline Solar cell efficiency is decreased from 78.7% to 78.1% and decreasing rate is 4.7%. On the other hand, Poly-crystalline Solar cell efficiency is decreased from 78.1% to 76.7% and decreasing rate is 1.8%. Single-crystalline has more bigger power drop than poly-crystalline by the silicon purity and silicon atom arrangement. Also, FF decreasing rate has more bigger drop than efficiency decreasing rate for the reason that the damage of surface by exterior environmental factor is the more influence in cell than other reason that is decreasing FF by damage of p-n junction.
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In the 1980s, advances in the passivation of both cell surfaces led to the first crystalline silicon solar cells with conversion efficiencies above 20%. With today's industry trend towards thinner wafers and higher cell efficiency, the passivation of the front and rear surfaces is now also becoming vitally important for commercial silicon cells. This paper presents a review of the surface passivation methods used since the 1970s, both on laboratory-type as well as industrial cells. Given the trend towards lower-cost (but also lower-quality) Si materials such as block-cast multicrystalline Si, ribbon Si or thin-film polycrystalline Si, the most promising surface passivation methods identified to date are the fabrication of a p–n junction and the subsequent passivation of the resulting silicon surface with plasma silicon nitride as this material, besides reducing surface recombination and reflection losses, additionally provides a very efficient passivation of bulk defects. Copyright © 2000 John Wiley & Sons, Ltd.
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