Surface passivation of crystalline silicon solar cells: a review
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In the 1980s, advances in the passivation of both cell surfaces led to the first crystalline silicon solar cells with conversion efficiencies above 20%. With today's industry trend towards thinner wafers and higher cell efficiency, the passivation of the front and rear surfaces is now also becoming vitally important for commercial silicon cells. This paper presents a review of the surface passivation methods used since the 1970s, both on laboratory-type as well as industrial cells. Given the trend towards lower-cost (but also lower-quality) Si materials such as block-cast multicrystalline Si, ribbon Si or thin-film polycrystalline Si, the most promising surface passivation methods identified to date are the fabrication of a p–n junction and the subsequent passivation of the resulting silicon surface with plasma silicon nitride as this material, besides reducing surface recombination and reflection losses, additionally provides a very efficient passivation of bulk defects. Copyright © 2000 John Wiley & Sons, Ltd.Keywords:
Passivation
Polycrystalline silicon
Carrier lifetime
The objective of this research was to study the performance of polycrystalline and monocrystalline silicon solar cells on some angles of tilt. The research was conducted at the Laboratory of Energy, Department of Agricultural Technology, Faculty of Agriculture, Sriwijaya University Indralaya, started on January to December 2016. The research consisted of two phases: preparation and polycrystalline and monocrystalline silicon solar panels circuit assembly; and circuit testing. The esearch used polycrystalline and monocrystaline silicon solar panel with variation of tilt angle 0o, 10o, 20o, and 30o. Parameters observed were solar panel power, solar panel efficiency, and intensity of sunlight. The results showed that monocrystalline silicon solar panel produced better performance (high power) at solar irradiance in range between 209.35 and 1437.8 W/m2; and polycrystalline silicon solar panel produced better performance
at solar irradiance in range between 0.32 and 193.5 W/m2 at various tilt angles. Polycrystalline and monocrystalline silicon solar panels produced the highest power at 30o angle on second day at 12.00 p.m with the highest solar irradiance was 1413,31 W/m2 for polycrystalline was 63.91 Watt and monocrystalline was 72.54 Watt. The highest efficiency produced by silicon solar panel was at 20o
angle for polycrystalline was 15.69 % and for monocrystalline was 19.63 %. So, monocrystalline silicon solar panel produced better performance than polycrystalline in areas with high solar irradiance.
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Experimental results of the effects of the arsenic doping concentration on the boron outdiffusion in n-polycrystalline/p-monocrystalline silicon structures are presented. The boron diffusivity is only 30 times larger in polycrystalline silicon than in monocrystalline silicon if the arsenic doping is high enough to cause enhanced grain growth. The diffusivity increase is about 130 if the polycrystalline silicon has small grains due to low arsenic doping. The boron loss from the base region of an advanced bipolar transistor doping profile by outdiffusion into the emitter polycrystalline silicon is of the order of 20% and needs to be considered for accurate device modeling.
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This chapter shows the current supply chain of the solar-grade silicon material. The silicon demand of solar cells has rapidly grown, which has become the main force for the global silicon market growth. Before 2002, the solar-grade polycrystalline silicon was mainly supplied from the scraped and rejected products of the semiconductor electronic-grade polycrystalline and monocrystalline silicon. Since the proportion of silicon used by the photovoltaic (PV) industry has been gradually increased, some quality electronic-grade polycrystalline silicon must be used. And the casting polycrystalline silicon has been widely used to the newly-built solar cells and material product lines since then, especially after 1990s. Most of the monocrystalline silicon solar cells adopt the silicon grown by CZ method as the raw material. Accordingly, the absorption layer of the a-Si thin-film cells is only one percentage of the crystalline silicon solar cells in terms of thickness.
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In this article, the effect of local mechanical stress on the properties of monocrystalline and polycrystalline silicon-based p-n junctions under illumination is studied and analyzed experimentally and theoretically. Results from the experiments showed that when the local mechanical force was increased from 4 N to 20 N, the short-circuit current of the monocrystalline silicon-based p-n junction changed nonlinearly from 24 mA to 43 mA, and that of the polycrystalline silicon-based p-n junction changed linearly from 14.7 mA to 16.7 mA. Experimental results shows that the ideality coefficient of the p-n junction based on monocrystalline silicon decreased from 1.274 to 0.807 and that of polycrystalline from 1.274 to 1.102. Therefore, when the mechanical force applied on monocrystalline silicon increased, the dominant recombination changed from Shockley-Read-Hall to Auger. On the other hand, in polycrystalline silicon, the dominant Shockley-Read-Hall recombination did not change due to the grain boundaries. So, it means that mechanical force cause the narrowing of the band gap of the silicon not increasing of number of recombination centers. When mechanical force increases from 4 N to 12 N, fill factor of monocrystalline increased by 5.75% and that of polycrystalline decrease by 1.1%. In the range of 4 N and 20 N mechanical force, saturation current of monocrystalline and polycrystalline silicon p-n junction changed from 8 μA to 41 μA. and 22 μA to 97 μA, respectively.
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Building integrated photovoltaic (BIPV) system is a new and modern technique for solar energy production in Kandahar. Due to its location, Kandahar has abundant sources of solar energy. People use both monocrystalline and polycrystalline silicon solar PV modules for the grid-connected solar PV system, and they don’t know that which technology performs better for BIPV system. This paper analysis the parameters, described by IEC61724 “Photovoltaic System Performance Monitoring Guidelines for Measurement, Data Exchange and Analysis” to evaluate which technology shows better performance for the BIPV system. The monocrystalline silicon BIPV system has a 3.1% higher array yield than the polycrystalline silicon BIPV system. The final yield is 0.2% somewhat higher for monocrystalline silicon than polycrystalline silicon. Monocrystalline silicon has 0.2% and 4.5% greater yearly yield factor and capacity factors than polycrystalline silicon respectively. Monocrystalline silicon shows 0.3% better performance than polycrystalline silicon. With 1.7% reduction and 0.4% addition in collection losses and useful energy produced respectively, monocrystalline silicon solar PV system shows good performance than polycrystalline silicon solar PV system. But system losses are the same for both technologies. The monocrystalline silicon BIPV system injects 0.2% more energy to the grid than the polycrystalline silicon BIPV system.
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Through the experiment,the results show that the sheet resistance of polycrystalline silicon wafer changes in different ways under different oxidation temperatures.Under high temperature,the sheet resistance of polycrystalline silicon lowers after oxidation;under low temperature,the sheet resistance of polycrystalline silicon rises after oxidation.However,the sheet resistance of monocrystalline silicon always lowers under any temperature.Compared with monocrystalline silicon,it is the special structure of polycrystalline silicon that makes the sheet resistance change in different trends.
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A piece of research was carried out on the low\|temperature, large\|area surface nitridation and oxidation of monocrystalline silicon by plasmas generated by Electron Cyclotron Resonance (ECR) microwave discharges. At temperatures below 80℃, we obtained uniform silicon nitride and silicon dioxide layers. Combining the optical diagnostics and composition detection of the plasmas, the mechanism of the ECR plasma treatment was discussed.The results show that this method can efficiently treat silicon surfaces at low temperatures, with large\|area uniform silicon nitride and silicon dioxide layers obtained.
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The proposed work consists of a comparative analysis of a model of a hybrid solar PV/T waterborne system using monocrystalline, polycrystalline and amorphous silicon solar modules. In this work, we have highlighted that the design of a PV/T waterborne system depends on the type of solar module. We have chosen on the market the polycrystalline / monocrystalline silicon solar modules with a power of 100Wc each and 60Wc for the amorphous. Behind each solar module is glued a coil exchanger of respective dimensions: 22m, 32m length and 12 mm diameter for water circulation. The prototypes of the water PVTs as well as their control modules have been realized in the west of Cameroon. Tests were conducted and the data collected led us to optimize the production of the solar photovoltaic modules. We obtained an average daily electrical energy gain of 10.7% or 10.7Wc (mono-crystalline); 13.9% or 13.9Wc (polycrystalline) and 0.97% or 1.62Wc (amorphous) compared to conventional solar panels. For the thermal side, we obtained an average daily thermal power of 214.944 W or 4 liters of hot water (37°C) for the monocrystalline panel; 298.35 W or 5,6 liters of hot water (44.5°C) for the polycrystalline module and 304,57 W or 13.78 liters of hot water (48.6°C) for the amorphous. These tests were made on an average sunshine of 835.51W/m2 between 7h30 min and 15h30 min. The analysis comparison of the developed models shows us that the PVT with poly water has a better electrical output followed by the mono then the amorphous and the PVT with amorphous water has a better thermal output followed by the poly and the mono. This approach allowed us to recover a quantity of the electrical power of the modules lost by Joule effect while determining the quantity of hot water that can be produced by a PV module
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A photovoltaic (PV) model is proposed on Matlab/Simulink environment considering the real atmospheric conditions and this PV model is tested with different PV panels technologies (monocrystalline silicon, polycrystalline silicon, and thin film). The meteorological data of Istanbul—the location of the study—such as irradiance, cell temperature, and wind speed are taken into account in the proposed model for each technology. Eventually, the power outputs of the PV module under real atmospheric conditions are measured for resistive loading and these powers are compared with the results of proposed PV model. As a result of the comparison, it is shown that the proposed model is more compatible for monocrystal silicon and thin-film modules; however, it does not show a good correlation with polycrystalline silicon PV module.
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