Extraction Current Transients: New Method of Study of Charge Transport in Microcrystalline Silicon
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The transport properties of microcrystalline silicon, namely, mobility and conductivity, are investigated by a new method, for which the simple theory as well as numerical modeling is presented. The basic idea of the new method is verified on amorphous hydrogenated silicon by comparison with the widely used time-of-flight method. Contrary to time of flight, the new method can be used even for relatively conductive materials. Preliminary results on microcrystalline silicon clearly indicate the critical role of amorphouslike tissue in transport in microcrystalline silicon.Keywords:
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We investigated the structural, electrical, and optical properties as well as light-induced degradation characteristics of silicon films prepared by photochemical vapor deposition at various hydrogen dilution ratios. The protocrystalline silicon deposited before the onset of the microcrystalline regime was most stable against light soaking. However, the films deposited at the onset of the microcrystalline regime, known to have the most competent device quality and stability, were observed to be less stable. Such instability at the onset of the microcrystalline regime is correlated with the existence of the clustered phase hydrogen that indicates microvoids in the films.
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Different classes of interesting materials (such as protocrystalline, microcrystalline and nanocrystalline) have been grown under conditions very near to those for the microcrystalline phase. In spite of the importance of these materials, a clear picture regarding their phase transitions is missing. A smooth transition from the microcrystalline to the nanocrystalline silicon phase, distinctly different from an abrupt order–disorder phase transition, has been demonstrated, for the first time, in hydrogenated silicon–carbon alloy films, prepared from a silane–methane gas mixture highly diluted in hydrogen, by varying the rf power in a plasma enhanced chemical vapour deposition system. The study has also provided the signature of medium range order in hydrogenated silicon–carbon alloy films.
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A model is proposed to assign the hydrogen complexes in amorphous and nano/microcrystalline silicon to the hydride stretching modes in infrared spectra. We demonstrate that this analysis approach is a helpful tool to characterize the material properties of amorphous and microcrystalline silicon.
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Abstract We developed high performance as‐deposited microcrystalline TFT. The microcrystalline silicon was deposited by novel MSEP (Metal Surface microwave Excitation Plasma)‐CVD with high deposition rate of over 20 nm/min and its crystalline ratio was over 70 %. TFT showed high mobility of 1.3 cm 2 /Vs.
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Three types of amorphous-titania films prepared by ion- and electron-beam techniques have been annealed thermally. An amorphous-crystalline transformation is found in each of these film types at around 350 °C. Its resulting microcrystalline structure and the exact transition temperature appear to be dictated by the rutile microcrystalline seed present in the as-deposited films under different deposition conditions. An amorphous film with a weak rutile seed crystallizes at a lower temperature into the anatase structure, while a film with a relatively strong rutile base crystallizes into the rutile structure at a somewhat higher temperature. It is demonstrated that Raman spectroscopy is a simple and effective tool for characterization of these submicron-thick amorphous films and for the dynamical study of such a phase transformation. Accompanying this amorphous-crystalline transformation, a two-order increase in elastic light scattering is noted implying optical degradation associated with microcrystalline boundaries. In addition, results of the anatase–rutile transformation at a temperature near 900 °C are presented.
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The phototransport properties of plasma deposited highly crystalline undoped hydrogenated microcrystalline silicon films were studied by measuring the steady state photoconductivity (SSPC) as a function of temperature and light intensity. The films possessing different thicknesses and microstructures had been well characterized by various microstructural probes. Microcrystalline Si films possessing dissimilar microstructural attributes were found to exhibit different phototransport behaviors. We have employed numerical modeling of SSPC to corroborate and further elucidate the experimental results. Our study indicates that the different phototransport behaviors are linked to different features of the proposed density of states maps of the material which are different for microcrystalline Si films having different types of microstructure.
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The most important features of microcrystalline silicon (/spl mu/c-Si:H) and microcrystalline silicon based p-i-n solar cells (specially those deposited by VHF-glow discharge) are reviewed. Since such material has been recognized to be a photovoltaically active material, stabilized cell efficiencies have steadily risen and have now reached 12% in the so called "micromorph" (microcrystalline/amorphous) tandem cell configuration.
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Light-induced dark- and photoconductivity changes (so-called SWE) have been investigated on GD undoped microcrystalline Si:H(μc-Si:H). The SWE decreases and reaches vanishing as the grain size increases. An interpretation for the two-phase structure and the contribution of grain boundary defects is given.
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The objective of the research under this subcontract is to explore, identify, evaluate, and develop non-conventional photovoltaic technologies capable of making a breakthrough in the production of low-cost electricity from sunlight. The specific objectives are to (1) develop microwave glow-discharge parameters for the deposition of high-quality microcrystalline silicon (mc-Si:H) thin films at high rate, (2) characterize this microcrystalline material, and (3) fabricate high-efficiency microcrystalline nip solar cells.
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