ZrO2 gate pH-sensitive field effect transistor
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In this paper we describe the temperature dependence of buried channel (BC) ion sensitive field effect transistor (ISFET). The device response depends on the temperature; hence, temperature variations can cause erroneous readings. A theoretical model describing the temperature dependence of BC-ISFET and a theoretical solution to eliminate the signal variations due to temperature changes are presented here. The suggested solution is based on an inverter containing n-BC-ISFET and p-BC-ISFET. The influence of various parameters on the operation of the inverter and its sensitivity are investigated. We discuss the influence of self-assembled monolayers on the operation of the inverter.
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In this paper we present the research results of influence of substrate potential in ion-selective field-effect transistors (ISFET) on output signal of chemical sensors, e.g. PH-meters. It is shown that the instability of substrate-source p-n junction bias in well-known chemical sensors, which use grounded reference electrode - ISFET gate, affect on sensor characteristics in negative way. The analytical description and research results of 'substrate effect' on ISFET characteristics are considered.
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The principle and operation of an ion-sensitive field effect transistor (ISFET) are summarized briefly, and the application of the device to development of biosensors is described. Several kinds of techniques are discussed to immobilize ionophores and enzymes on the ISFET.
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We have previously reported a pH measurement device using a microfluidic technology and ion-sensitive field-effect transistor (ISFET). The device has successfully measured pH values, however the range of linearity was limited within neutral range. In this paper we have evaluated the linearity of the sensor signal with a wide range of pH. The present device obtained high linearity in the range of pH 1-10 with the correlation factor of 0.9985. The averaged measurement error and standard deviation were -0.0083 and 0.0085 pH, respectively.
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An FET sensor is an integrated device of the insulated gate field effect transistor (IGFET) and the chemical sensor and therefore is named as chemically sensitive field effect transistor (CHEMFET). In the CHEMIFET, the gate metal is replaced a more complex structure having chemically sensitive layer. CHEMFETs are new type of chemical sensors and have potential advantages over conventional chemical sensors in miniatuarization, robust solid state nature, mass productivity etc. According to the nature of the interaction between the species to be detected and the chemically sensitive layer, CHEMFETs can be divided into two groups : one that will measure gas concentrations, for example Pd gate FET (H2 gas sensor) and the other that will measure ion concentrations in the solution. The latter called an ion sensitive FET (ISFET). This paper describes the present status of ISFET, that is, its histoical survey, principle, fabrication method and ion selectivities.
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