Characterization of gallium nitride (GaN) blue LEDs
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Commercially available GaN blue LEDs have been characterized for use as light sources for chemical sensors. These new LEDs are a double heterojunction structure of InGaN/AlGaN that have a peak output at 450 nm. Other groups have investigated these devices for full color displays. This investigation addresses parameters critical to chemical sensors. Several different paramters were characterized including spectra verses drive current, spectra before and after aging, output power verses drive current, and lifetime. The results of this characterization indicate that these devices perform well for some chemical sensors.Keywords:
Characterization
Wide-bandgap semiconductor
Indium gallium nitride
In recent literatures, the quantum efficiency of conventional blue InGaN light-emitting diodes (LEDs) is quite limited under relatively high driving current with conventional GaN barriers due presumably to the poor injection efficiency of hole. In this study, the efficiency enhancement of blue InGaN LEDs with indium composition graded InGaN barriers is proposed. The energy band diagram, carrier concentration in the quantum wells, diagram of hole current, radiative recombination rate, L-I curves, and internal quantum efficiency are investigated numerically. The simulation results show that the InGaN LED with graded InGaN barriers has better performance over its conventional counterpart with GaN barriers due to enhanced efficiency of hole injection. The simulation results also suggest that under relatively high current injection, the internal quantum efficiency and output light power are markedly improved when the traditional GaN barriers are replaced by graded InGaN barriers. According to the improved optical properties, the new-designed LED has promising potential in solid state lighting.
Indium gallium nitride
Quantum Efficiency
Band diagram
Solid-State Lighting
Wide-bandgap semiconductor
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The control of emission characteristics is of great importance as more specific wavelengths for applications are in demand with respect to nitride materials. Detailed investigations have been carried out to understand the emission states in multi quantum wells (MQWs) of Indium Gallium Nitride and Single Quantum well Aluminum Gallium Nitride structures using structural and optical investigations. The effect of growth parameters including the well thickness and the composition has been investigated and will be presented in detail.
Indium gallium nitride
Wide-bandgap semiconductor
Indium nitride
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Indium gallium nitride
Indium nitride
Wide-bandgap semiconductor
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Commercially available GaN blue LEDs have been characterized for use as light sources for chemical sensors. These new LEDs are a double heterojunction structure of InGaN/AlGaN that have a peak output at 450 nm. Other groups have investigated these devices for full color displays. This investigation addresses parameters critical to chemical sensors. Several different paramters were characterized including spectra verses drive current, spectra before and after aging, output power verses drive current, and lifetime. The results of this characterization indicate that these devices perform well for some chemical sensors.
Characterization
Wide-bandgap semiconductor
Indium gallium nitride
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The history of development for gallium-nitride-based light-emitting diodes (LEDs) is reviewed. We identify two broad developments in GaN-based LED technology: first, the key breakthroughs that enabled the development of GaN-based devices on foreign substrates like sapphire (first-generation LEDs), and, second, a new wave of devices benefiting from developments in GaN substrate manufacturing, which has led to native bulk-GaN-based LEDs with unprecedented performance characteristics that portend a disruptive shift in LED output power density and the corresponding cost of generating light.
Wide-bandgap semiconductor
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Indium Gallium Nitride is a material much known for its wide range of tunable bandgap. This feature makes it a viable candidate for optoelectronics and photovoltaic devices. Quantum dots made out of Indium Gallium Nitride have found numerous applications. However, it is the wurtzite Indium Gallium Nitride quantum dots which have been much studied. But recent advancements show that zinc blende Indium Gallium Nitride structure can also be utilized for multipurpose devices. This work has focused on finding the tunable bandgap and wavelength of zinc blende Indium Gallium Nitride quantum dots to evaluate its possibility of being used in optoelectronics and photovoltaics.
Indium gallium nitride
Wurtzite crystal structure
Wide-bandgap semiconductor
Indium nitride
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Indium gallium nitride
Indium nitride
Wide-bandgap semiconductor
Aluminium nitride
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III-Nitride light emitting diodes (LEDs) are widely used in a range of high efficiency lighting and display applications, which have enabled significant energy savings in the last decade. Despite the wide application of GaN LEDs, transport mechanisms across InGaN/GaN heterostructures in these devices are not well-explained. Fixed polarization sheet charges at InGaN/GaN interfaces lead to large interface dipole charges, which create large potential barriers to overcome. One-dimensional models for transport across such heterostructures predict turn-on voltages that are significantly higher than that found in real devices. As a result, conventional models for transport cannot predict the performance of new designs such as for longer wavelength LEDs, or for multi-quantum well LEDs. In this work, we show that incorporating low and high Indium compositions within quantum wells at the submicron scale can provide accurate prediction of the characteristics of GaN/InGaN light emitting diodes.
Wide-bandgap semiconductor
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We demonstrate optical drive with 1.16-PHz frequency using gallium nitride (GaN) wide-bandgap semiconductor. An isolated attosecond pulse with coherent broadband spectrum reveals dipole oscillation with 860-as periodicity in the GaN electron and hole system.
Wide-bandgap semiconductor
Indium gallium nitride
Attosecond
Oscillation (cell signaling)
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Indium gallium nitride
Indium nitride
Wide-bandgap semiconductor
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