Epitaxial growth of CdTe on Si through perovskite oxide buffers

For the first time, nanometer-thin perovskite oxide buffers have been used to accommodate the lattice mismatch between CdTe epitaxial layers and Si substrates. The resulting CdTe is single crystal with quality comparable to that grown by the more mature technology using micron-thick ZnTe or CdTe buffers. This shows that the use of nanometer-thin perovskite oxide buffers is a promising approach for the epitaxial growth of II–VI compounds on Si.